IXYX140N120A4

Overview

The IXYX140N120A4 is a discrete N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS, utilizing XPT™ GenX4™ trench technology. It features a PLUS247 package with a collector-emitter breakdown voltage of 1200V and a continuous collector current rating of 140A at 110°C case temperature. The device exhibits a maximum saturated collector-emitter voltage of 1.70V at 25°C and 1.50V at 150°C. Thermal resistance from junction to case is specified at 0.10°C/W, supporting a maximum power dissipation of 1500W at 25°C. Operating temperatures range from -55°C to +175°C.

Feature Summary

• Optimized for low conduction losses through advanced XPT™ GenX4™ trench technology
• Positive thermal coefficient of Vce(sat) ensures stable parallel operation
• International standard PLUS247 package facilitates high power density mounting

Applications

• Power inverters
• Uninterruptible Power Supplies (UPS)
• Motor drives
• Switching Mode Power Supplies (SMPS)
• Battery chargers

Procurement Notes

Verify the component authenticity against Littelfuse or IXYS official documentation before integration. Confirm that the ordering suffix 'A4' corresponds to the specific RoHS-compliant variant and packaging format required for your assembly process. Ensure thermal interface materials are compatible with the PLUS247 outline dimensions and mounting force specifications provided in the datasheet.

Selection Notes

Select this component when designing circuits requiring high current handling capabilities up to 140A with low on-state voltage drops. The positive temperature coefficient of saturation voltage simplifies the design of paralleled configurations without active current sharing circuits. Evaluate gate drive requirements based on the specified total gate charge and switching energy losses under expected operating frequencies and load conditions.

Part Context

This device belongs to the IXYS 1200V XPT™ GenX4™ IGBT family, designed for medium-frequency switching applications up to 5kHz. It represents an evolution in trench gate technology aimed at reducing both conduction and switching losses compared to previous planar generations.

Replacement Considerations

Direct replacements within the same series include the IXYX110N120A4 and IXYX50N120A4, which share identical pinouts and package outlines but offer lower current ratings.