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The IXYX180N65A5 is a single N-channel IGBT from the Gen5 XPT family, rated for 650 V collector-emitter voltage and 180 A continuous collector current at 110 °C. It utilizes Trench IGBT technology with Extreme Light Punch Through design to achieve low conduction losses and reduced thermal resistance. The device features a maximum saturation voltage of 1.35 V at 100 A and 15 V gate drive. It supports a peak collector current of 1030 A and operates within a junction temperature range of -55 °C to 175 °C. Packaged in a PLUS-247 (TO-247-3) through-hole housing, it offers a thermal resistance from junction to case of 0.13 °C/W.
Verify component authenticity by cross-referencing the manufacturer part number against official Littelfuse documentation. Confirm that the received units match the specified Gen5 XPT series and PLUS-247 package outline. Ensure storage conditions remain within the specified temperature limits to maintain device integrity prior to installation.
Select this component when designing circuits requiring high current handling up to 180 A at elevated temperatures alongside low switching losses. The specific thermal resistance and saturation voltage characteristics make it suitable for applications demanding efficient heat dissipation and precise gate drive control within the 650 V blocking voltage constraint.
This device belongs to the IXYS (now Littelfuse) Gen5 XPT discrete IGBT portfolio. It represents an evolution in trench field-stop technology designed for medium-frequency switching applications. The product line emphasizes improved efficiency and ruggedness compared to previous planar generations, targeting industrial power conversion systems.
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical ratings before considering alternative manufacturers or different package variants within the same voltage class.