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The IXYX220N65A5 is a 650 V, 220 A Gen5 XPT™ IGBT manufactured by IXYS. It utilizes proprietary thin-wafer technology and a Trench IGBT process to achieve reduced thermal resistance and low conduction losses. The device features a PLUS-247 package with a collector tab connection. Key electrical parameters include a maximum collector-emitter voltage of 650 V, a continuous collector current of 220 A at TC = 110 °C, and a typical saturation voltage of 1.15 V at IC = 100 A and VGE = 15 V. It supports a junction temperature range from -55 °C to 175 °C.
Verify the component status before procurement as the source indicates it may be obsolete or subject to discontinuation. Confirm that the PLUS-247 package dimensions match your PCB footprint requirements. Ensure the thermal interface material selection aligns with the specified junction-to-case thermal resistance values for your intended operating temperature range.
Select this component for high-power applications requiring robust switching performance up to 5 kHz. Consider the 1.35 V maximum saturation voltage when calculating conduction losses at rated currents. Verify that the gate drive circuit can supply sufficient current to manage the 750 nC total gate charge efficiently. Ensure the system's thermal management can handle the 1610 W power dissipation rating under appropriate cooling conditions.
This part belongs to the IXYS Gen5 XPT™ family of Insulated Gate Bipolar Transistors. It is designed for high-efficiency power conversion systems where low switching and conduction losses are critical. The device represents an evolution in trench gate technology optimized for industrial and automotive power electronics applications.
Check for direct replacements within the IXYS IXYX series with similar voltage and current ratings. Verify pinout compatibility with the PLUS-247 package. Ensure any substitute maintains comparable thermal resistance and safe operating area characteristics.