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The IXYX300N65A3 is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by IXYS. It utilizes XPT and GenX3 technologies to achieve high performance in power switching applications. The device features a collector-emitter maximum voltage (VCEO) of 600 V and a continuous collector current (Ic) of 300 A at 25°C, with a peak pulsed current capability of 1.14 kA. It operates within a temperature range of -55°C to +175°C and has a power dissipation rating of 2.3 kW. The component is housed in a TO-247-PLUS-3 package designed for through-hole mounting.
Verify the specific ordering suffix against the manufacturer's latest datasheet to ensure correct pinout and electrical characteristics. Confirm RoHS compliance status and lead times directly with authorized distributors or the manufacturer, as availability fluctuates based on production cycles.
Select this component for applications requiring high current handling in a standard through-hole package. Ensure the gate drive circuit can support the specified Vge limits and that the thermal management system can dissipate the rated 2.3 kW power loss under worst-case operating conditions.
This part belongs to IXYS' high-power IGBT portfolio, specifically leveraging the GenX3 generation of trench gate technology. It is distinct from lower-current variants like the IXYN series and different packaging options such as the module-based GENX2 series, offering a balance of current density and mechanical simplicity for discrete mounting.
Direct replacements must match the 600V/300A specification and TO-247-PLUS-3 footprint. Verify saturation voltage and switching times against the original design requirements to ensure compatibility with existing gate drivers and thermal constraints.