IXYX30N170CV1

Overview

The IXYS IXYX30N170CV1 is an N-channel Insulated Gate Bipolar Transistor (IGBT) designed for high-voltage power switching applications. It features a maximum continuous collector current of 30 A and a collector-emitter voltage rating of 1700 V. The device utilizes the PLUS247 through-hole package, supporting a maximum power dissipation of 937 W. Key electrical parameters include a collector-emitter saturation voltage of 4 V and a gate-emitter voltage limit of 20 V. It operates within a temperature range of -55°C to 175°C and exhibits a switch speed of 95 ns.

Feature Summary

• High voltage capability with 1700 V breakdown rating suitable for demanding industrial environments
• Robust thermal performance in PLUS247 through-hole packaging for effective heat dissipation
• Fast switching characteristics optimized for high-frequency power conversion efficiency

Applications

• Industrial motor drives and variable frequency drives
• High voltage DC-DC converters and power supplies
• Inverter circuits for renewable energy systems

Procurement Notes

Verify component authenticity by checking manufacturer markings against official datasheets. Confirm package integrity and pin alignment prior to installation. Ensure static protection measures are followed during handling. Cross-reference ordering information with authorized distributors to avoid counterfeit products. Validate RoHS compliance status if required by specific regulatory standards.

Selection Notes

Select this component when designing circuits requiring high voltage isolation and moderate current handling. The 1700 V rating provides safety margins for transient overvoltages. Consider the 937 W power dissipation capability for heatsink design calculations. The through-hole mounting style suits prototyping and applications requiring mechanical robustness over surface mount density.

Part Context

This part belongs to IXYS' High Voltage IGBT series, specifically engineered for superior performance in high-voltage scenarios. The IXYX30N170CV1 variant integrates advanced trench technology to minimize conduction losses while maintaining fast switching speeds. It represents a specialized solution for applications where standard voltage devices are insufficient.

Replacement Considerations

Direct substitutes may include other 1700 V, 30 A IGBTs in similar packages such as the IXGH series or comparable offerings from other manufacturers like Infineon or Mitsubishi. Verify pinout compatibility and thermal resistance values before substitution.