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Product Detailed Parameters
- Description：JFET P-CH 30V TO92-3
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Box (TB)
- FET Type：P-Channel
- Voltage - Breakdown (V(BR)GSS)：30 V
- Drain to Source Voltage (Vdss)：30 V
- Current - Drain (Idss) @ Vds (Vgs=0)：2 mA @ 15 V
- Current Drain (Id) - Max：-
- Voltage - Cutoff (VGS off) @ Id：1 V @ 10 nA
- Input Capacitance (Ciss) (Max) @ Vds：8pF @ 10V (VGS)
- Resistance - RDS(On)：250 Ohms
- Power - Max：400 mW
- Operating Temperature：150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Supplier Device Package：TO-92-3
- Grade：-
- Qualification：-
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Overview
The J176,126 is a P-channel Junction Field-Effect Transistor (JFET) manufactured by NXP USA Inc. It features a maximum power dissipation of 400 mW and an operating junction temperature rating of 150°C. The device is housed in a TO-226-3 package, also known as TO-92-3 with formed leads, designed for through-hole mounting applications.
Feature Summary
- P-channel JFET configuration
- Through-hole TO-92-3 package
- High thermal stability
Applications
- Analog signal switching
- Low-noise amplification stages
- Constant current source circuits
Procurement Notes
Verify the specific datasheet version from NXP USA Inc. to confirm electrical characteristics and mechanical dimensions. Ensure the TO-92-3 package variant matches the design requirements. Cross-reference the part number J176,126 with official manufacturer documentation to validate authenticity and compliance with specified standards before integration into production systems.
Selection Notes
Select this component for applications requiring P-channel JFET functionality with low noise characteristics. The TO-92-3 package suits space-constrained through-hole designs. Evaluate the 400 mW power dissipation limit against thermal management constraints. Confirm compatibility with circuit voltage levels and current requirements based on the official electrical specifications provided in the manufacturer's documentation.
Part Context
This discrete semiconductor product belongs to the JFET category within NXP USA Inc.'s transistor portfolio. It serves as a fundamental active component for analog circuit design, offering reliable performance in signal processing roles. The TO-92-3 form factor provides a standard mounting solution for various electronic assemblies requiring compact, robust transistor solutions.
Replacement Considerations
Consult official NXP USA Inc. documentation for verified substitute part numbers. Do not assume cross-compatibility with generic JFETs without validating pinout, voltage ratings, and thermal limits against the original specifications.
FAQ
What is the maximum power dissipation of the J176,126?
The maximum power dissipation is 400 mW.
What package type does the J176,126 use?
It uses a TO-226-3 package, also referred to as TO-92-3 with formed leads.
