J211-D74Z

J211-D74Z

$0.56
  • Description:RF MOSFET JFET 25V TO92-3
  • Series:-

SKU:f48b35f8e6ec Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET JFET 25V TO92-3
  • Series:-
  • Mfr:onsemi
  • Package:Cut Tape (CT),Tape & Box (TB)
  • Technology:JFET
  • Frequency:-
  • Gain:-
  • Voltage - Test:-
  • Current Rating (Amps):20mA
  • Noise Figure:-
  • Current - Test:-
  • Power - Output:-
  • Voltage - Rated:25 V
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA) Formed Leads
  • Supplier Device Package:TO-92-3
  • Configuration:N-Channel

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J211-D74Z

Overview

The onsemi J211-D74Z is an N-channel RF amplifier utilizing Junction Field-Effect Transistor (JFET) technology. It is housed in a TO-92 package with three leads and designed for HF/VHF mixer and amplifier applications. The device provides sufficient gain and low-noise performance suitable for sensitive receivers. Key electrical parameters include a drain-gate voltage of 25 V, a gate-source breakdown voltage of -25 V, and a zero-gate voltage drain current ranging from 7.0 to 20 mA. Total device dissipation is rated at 350 mW, with an operating junction temperature range spanning from -55°C to +150°C.

Feature Summary

  • Designed specifically for high-frequency and very-high-frequency mixer and amplifier circuits where standard processes are insufficient.
  • Provides adequate gain and low-noise characteristics optimized for use in sensitive receiver systems.
  • Features interchangeable source and drain terminals within the TO-92 package configuration.

Applications

  • HF/VHF mixer circuits
  • RF amplifier stages
  • Sensitive receiver front-end applications

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging details. The D74Z suffix indicates Ammo packing in the TO-92 form factor. Ensure that the procurement channel sources directly from authorized distributors or the manufacturer to guarantee component authenticity and traceability. Confirm compliance requirements prior to integration into final assemblies.

Selection Notes

Select this component when designing circuits requiring N-channel JFET amplification in the HF/VHF spectrum. Consider the 350 mW power dissipation limit and the -55°C to +150°C operating temperature range for thermal management. Verify that the required transconductance and noise figures align with the specified typical performance characteristics for the target application frequency.

Part Context

This part belongs to the J211 series of N-channel RF amplifiers manufactured by onsemi. It is sourced from Process 90, distinguishing it from earlier versions like the J111 which utilized Process 50. The J211-D74Z variant specifically denotes the through-hole TO-92 package configuration, distinct from surface-mount alternatives such as the MMBFJ211 in SOT-23.

Replacement Considerations

Public confirmed substitute part numbers: MMBFJ211 (SOT-23 package).

FAQ

Are the source and drain terminals interchangeable?

Yes, the datasheet explicitly notes that the source and drain leads are interchangeable.

What is the maximum drain-gate voltage rating?

The absolute maximum drain-gate voltage is rated at 25 V.

What manufacturing process is used for this device?

The J211 is sourced from Process 90, which offers improved characteristics compared to older processes.

J211-D74ZJ211-D74Z
$0.56
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