SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The onsemi J211-D74Z is an N-channel RF amplifier utilizing Junction Field-Effect Transistor (JFET) technology. It is housed in a TO-92 package with three leads and designed for HF/VHF mixer and amplifier applications. The device provides sufficient gain and low-noise performance suitable for sensitive receivers. Key electrical parameters include a drain-gate voltage of 25 V, a gate-source breakdown voltage of -25 V, and a zero-gate voltage drain current ranging from 7.0 to 20 mA. Total device dissipation is rated at 350 mW, with an operating junction temperature range spanning from -55°C to +150°C.
Verify the specific ordering suffix against official documentation to confirm packaging details. The D74Z suffix indicates Ammo packing in the TO-92 form factor. Ensure that the procurement channel sources directly from authorized distributors or the manufacturer to guarantee component authenticity and traceability. Confirm compliance requirements prior to integration into final assemblies.
Select this component when designing circuits requiring N-channel JFET amplification in the HF/VHF spectrum. Consider the 350 mW power dissipation limit and the -55°C to +150°C operating temperature range for thermal management. Verify that the required transconductance and noise figures align with the specified typical performance characteristics for the target application frequency.
This part belongs to the J211 series of N-channel RF amplifiers manufactured by onsemi. It is sourced from Process 90, distinguishing it from earlier versions like the J111 which utilized Process 50. The J211-D74Z variant specifically denotes the through-hole TO-92 package configuration, distinct from surface-mount alternatives such as the MMBFJ211 in SOT-23.
Public confirmed substitute part numbers: MMBFJ211 (SOT-23 package).
Yes, the datasheet explicitly notes that the source and drain leads are interchangeable.
The absolute maximum drain-gate voltage is rated at 25 V.
The J211 is sourced from Process 90, which offers improved characteristics compared to older processes.