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Product Detailed Parameters
- Description：RF MOSFET JFET TO92-3
- Series：-
- Mfr：onsemi
- Package：Bulk
- Technology：JFET
- Frequency：-
- Gain：-
- Voltage - Test：-
- Current Rating (Amps)：-
- Noise Figure：-
- Current - Test：-
- Power - Output：-
- Voltage - Rated：25 V
- Grade：-
- Qualification：-
- Mounting Type：Through Hole
- Package / Case：TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package：TO-92-3
- Configuration：N-Channel
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Overview
The onsemi J300 is an N-channel Junction Field-Effect Transistor (JFET) designed for RF applications. It features a single channel configuration with a maximum gate-source voltage of 25 V and a power dissipation rating of 350 mW. The device is housed in a TO-92 package, providing a compact form factor suitable for various discrete semiconductor needs. Its specifications support operation as an RF transistor or switch within defined electrical limits.
Feature Summary
- N-channel junction field-effect transistor architecture
- Suitable for RF switching and amplification functions
- Compact TO-92 surface mount compatible package
Applications
- RF signal switching circuits
- Low-noise amplifier stages
- Discrete RF transistor applications
Procurement Notes
Verify the specific datasheet revision and RoHS compliance status prior to ordering. Confirm that the TO-92 package variant matches your board layout requirements. Ensure the 25 V gate-source voltage limit aligns with your circuit design constraints. Check for any recent product change notifications regarding manufacturing origin or material composition.
Selection Notes
Select this component when an N-channel JFET is required for RF frequency operations. The 350 mW power dissipation capability defines its thermal handling limits. Consider the TO-92 package size for space-constrained designs. Evaluate if the 25 V breakdown voltage meets the system's peak voltage requirements without derating issues.
Part Context
This part belongs to the discrete semiconductor category, specifically within the transistors and FETs segment. It serves as a fundamental active component for analog and RF circuit design. The JFET technology offers distinct characteristics compared to MOSFETs, particularly regarding input impedance and noise performance in high-frequency scenarios.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with alternative JFETs based on pinout, voltage ratings, and package dimensions before substitution.
