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The J309_D27Z is an N-channel depletion-mode Junction Field-Effect Transistor (JFET) manufactured by onsemi, designed for VHF and UHF amplifier applications. It utilizes a TO-92-3 through-hole package with a plastic body. The device features a drain-source breakdown voltage of 25 V and a gate-source cutoff voltage of -6 V. Key electrical characteristics include a typical forward transconductance of 1.5 mS at VDS=10V and ID=1mA. The component operates within a temperature range of -55°C to +150°C junction temperature and has a maximum power dissipation of 625 mW.
Verify the specific suffix _D27Z against official onsemi documentation to confirm tape-and-reel or bulk packaging configuration. Ensure RoHS compliance status matches current manufacturing standards. Cross-reference the part number with authorized distributors to validate authenticity and traceability before procurement.
Select this component when designing circuits requiring N-channel JFETs for VHF/UHF frequencies. Compare transconductance and noise figure specifications against alternative JFETs like the BF245A or 2N5484 series. Ensure the TO-92 package fits the PCB layout constraints and that the 625 mW power dissipation rating meets the thermal requirements of the application.
The J309 series belongs to onsemi's portfolio of discrete JFETs intended for radio frequency applications. This specific variant maintains the standard electrical profile of the J309 family while potentially differing in packaging or lot-specific markings indicated by the D27Z suffix. It serves as a replacement for legacy RF designs requiring stable depletion-mode operation.
Potential substitutes include the BF245A and 2N5484, which share similar N-channel JFET characteristics for VHF/UHF use. Verify pinout compatibility and ensure that transconductance and breakdown voltage parameters meet or exceed the original design requirements.