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The J310RLRP is an N-channel depletion-mode JFET designed for VHF/UHF amplifier applications. It operates within a drain-source voltage of 25 Vdc and dissipates up to 350 mW at 25°C ambient temperature. The device features a gate-source cutoff voltage ranging from -2.0 Vdc to -6.5 Vdc and a zero-gate-voltage drain current between 24 mA and 60 mA. At 100 MHz, it provides a common-gate power gain of approximately 16 dB with a forward transconductance of 12 mmhos. Packaged in a TO-92 (Case 29-11) format, it supports tape and ammo box shipping configurations.
Verify the specific ordering suffix RLRP against official documentation to confirm the tape and ammo box packaging configuration. Ensure that the component meets all applicable environmental standards required for the intended deployment environment before finalizing procurement orders.
Select this component when designing circuits requiring N-channel depletion mode operation at VHF or UHF frequencies. Evaluate the specific gate-source cutoff voltage range and zero-gate-voltage drain current requirements to ensure compatibility with the target biasing network and impedance matching strategy.
This part belongs to the J309/J310 series of preferred devices manufactured by onsemi. These components are specifically engineered as N-channel depletion JFETs for use in VHF and UHF amplifier applications, offering standardized performance metrics for consistent circuit design integration.
The J309 serves as a functional alternative within the same series. Verify pinout compatibility and electrical parameter alignment, particularly regarding gate-source cutoff voltage and drain current specifications, before implementing any substitution in existing designs.
The maximum continuous drain-source voltage rating is 25 Vdc.
The gate-source cutoff voltage typically ranges from -2.0 Vdc to -6.5 Vdc depending on the specific device unit.
The component utilizes the TO-92 package, identified as Case 29-11 Style 5.