J310ZL1G

Overview

The J310ZL1G is an N-channel depletion-mode Junction Field-Effect Transistor (JFET) designed for VHF and UHF amplifier applications. It operates with a maximum drain-source voltage of 25 Vdc and a total device dissipation of 350 mW at 25°C ambient temperature. The device features a zero-gate-voltage drain current range of 24 to 60 mA and a gate-source cutoff voltage between -2.0 V and -6.5 V. Packaged in a TO-92 outline, it supports junction temperatures from -65°C to +125°C.

Feature Summary

• N-channel depletion mode operation suitable for RF amplification
• Optimized for VHF and UHF frequency performance
• Low noise characteristics for signal integrity

Applications

• VHF/UHF amplifier circuits
• RF signal processing stages
• Low-noise front-end amplifiers

Procurement Notes

Verify the specific ordering suffix ZL1G against official documentation to confirm tape and ammo box packaging containing 2000 units. Confirm Pb-free status via the G suffix if required. Ensure compatibility with TO-92 mounting requirements and validate thermal derating curves for high-temperature environments before finalizing supply agreements.

Selection Notes

Select this component when designing circuits requiring N-channel depletion mode behavior with specific transconductance profiles. Compare the J310 parameters against the J309 variant, noting differences in zero-gate-voltage drain current and cutoff voltage ranges. Ensure the selected part meets the required operating frequency and power dissipation limits for the target application.

Part Context

This device belongs to the J309/J310 series of preferred N-channel depletion JFETs manufactured by onsemi. These components are specifically engineered for radio frequency applications, offering stable performance across varying temperatures. The series provides standardized pinouts and electrical characteristics for consistent integration into RF designs.

Replacement Considerations

The J309 serves as a functional alternative within the same series, sharing identical package dimensions and pinout configurations. Verify that the J309's lower drain current and cutoff voltage specifications align with the circuit requirements previously met by the J310ZL1G.

FAQ

What is the typical forward transconductance at 100 MHz?

The common-source forward transconductance is typically 12 mmhos at 100 MHz under standard test conditions.

How does the device handle reverse gate current?

The gate reverse current is specified as -1.0 nA at 25°C and -1.0 µA at 125°C when the gate-source voltage is -15 Vdc.

What is the maximum allowable junction temperature?

The maximum junction temperature range extends up to +125°C for reliable operation.