JANS2N5339U3

Single Bipolar Transistors Overview

The JANS2N5339U3 is a single NPN power bipolar junction transistor (BJT) manufactured by Microchip Technology. It is designed for high-reliability applications and features a maximum collector-emitter voltage of 100 V and a continuous collector current of 5 A. The device has a maximum power dissipation of 1 W and operates within a junction temperature range of -65°C to +200°C. It meets the MIL-PRF-19500/560 specification, ensuring compliance with rigorous military standards for radiation hardness and performance stability in extreme environments.

Single Bipolar Transistors Feature Summary

• Radiation-hardened design suitable for space and high-radiation environments
• Military-grade qualification compliant with MIL-PRF-19500/560 specifications
• Extended thermal operation capability up to 200°C junction temperature

Single Bipolar Transistors Applications

• Spacecraft power management systems
• High-reliability military communication equipment
• Radiation-tolerant switching circuits

Single Bipolar Transistors Procurement Notes

Verify that the specific ordering suffix matches the required radiation hardness level and package variant. Confirm that the component is sourced from an authorized distributor to ensure authenticity and traceability. Check for recent Product Change Notifications (PCNs) regarding assembly site or labeling updates. Ensure the procurement quantity aligns with the manufacturer's minimum order requirements and lead times.

Single Bipolar Transistors Selection Notes

Select this component when radiation tolerance and extended temperature operation are critical. Compare against standard commercial equivalents if environmental constraints allow. Verify pinout compatibility with existing TO-39 footprints. Consider the higher cost associated with military-grade screening and radiation testing during budget planning.

Single Bipolar Transistors Part Context

This part belongs to the 2N5339 family of power transistors produced by Microchip Technology under its defense and aerospace portfolio. The 'JANS' prefix indicates a specific level of radiation hardening and military qualification distinct from commercial variants. It serves as a robust switching element in harsh environments where standard silicon devices would fail due to latch-up or degradation.