JANSM2N3637UB

Single Bipolar Transistors Overview

The JANSM2N3637UB is a PNP silicon small-signal bipolar junction transistor (BJT) manufactured by Microchip Technology. It is designed for high-reliability applications and features a hermetically sealed LCC-3 surface-mount package. The device supports a maximum continuous collector current of 1 A and withstands collector-emitter and collector-base voltages up to 175 V, with an emitter-base voltage rating of 5 V. Power dissipation is rated at 1.5 W. The component operates within a temperature range of -65°C to +200°C and provides a minimum DC current gain (hFE) of 55 at 100 uA and 10 V.

Single Bipolar Transistors Feature Summary

• Hermetically sealed construction suitable for harsh environments
• High thermal stability with extended operating temperature range
• Surface-mount LCC-3 package design

Single Bipolar Transistors Applications

• Military aerospace systems
• Radiation-hardened electronics
• High-reliability signal processing circuits

Single Bipolar Transistors Procurement Notes

Verify the specific suffix against official Microchip documentation to confirm radiation hardness and quality level requirements. Ensure the LCC-3 package footprint matches the target PCB layout. Confirm compliance with relevant military standards before integration into critical systems.

Single Bipolar Transistors Selection Notes

Select this component when radiation tolerance and high-temperature operation are required in a surface-mount form factor. Compare power dissipation limits against thermal management capabilities. Verify that the 175 V voltage ratings align with circuit peak demands.

Single Bipolar Transistors Part Context

This part belongs to the JAN series of radiation-hardened semiconductors produced by Microchip. It serves as a specialized variant of standard BJT designs, optimized for space and defense applications where reliability under extreme conditions is mandatory.

Single Bipolar Transistors Replacement Considerations

JAN2N3637UB/TR

Single Bipolar Transistors FAQ

What is the maximum operating temperature?

The maximum operating temperature is +200°C.

Is this component available in a through-hole package?

No, the JANSM2N3637UB is specifically packaged in an LCC-3 surface-mount configuration.

What is the DC current gain specification?

The minimum DC current gain (hFE) is 55, measured at 100 uA and 10 V.