Single Bipolar Transistors JANSR2N3700UB product image

JANSR2N3700UB

$32.02
  • Description:TRANS NPN 80V 1A UB
  • Series:-

SKU:82e069052449 Category: Brand:

  
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JANSR2N3700UB is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is TRANS NPN 80V 1A UB. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for JANSR2N3700UB

  • Description:TRANS NPN 80V 1A UB
  • Series:-
  • Mfr:Microchip Technology
  • Package:Tray
  • Transistor Type:NPN
  • Current - Collector (Ic) (Max):1:00 AM
  • Voltage - Collector Emitter Breakdown (Max):80 V
  • Vce Saturation (Max) @ Ib, Ic:500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max):10nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce:50 @ 500mA, 10V
  • Power - Max:500 mW
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:4-SMD, No Lead
  • Supplier Device Package:UB
  • Grade:Military
  • Qualification:MIL-PRF-19500/391

Single Bipolar Transistors datasheet and documents for JANSR2N3700UB

JANSR2N3700UB

Single Bipolar Transistors Overview

The JANSR2N3700UB is a silicon NPN single bipolar junction transistor manufactured by Microchip Technology. It utilizes an LCC-3 surface-mount package and supports SMD/SMT installation. The device operates within a temperature range of -65°C to +200°C. Key electrical ratings include a maximum DC collector current of 1 A, a collector-emitter voltage (VCEO) of 80 V, and a collector-base voltage (VCBO) of 140 V. The emitter-base voltage (VEBO) is rated at 7 V, with a power dissipation capability of 500 mW.

Single Bipolar Transistors Feature Summary

  • Designed for high-temperature environments with an operational limit up to +200°C
  • Utilizes a compact LCC-3 surface-mount package for automated assembly
  • Provides robust voltage handling with a 140 V collector-base rating

Single Bipolar Transistors Applications

  • High-reliability aerospace electronic systems
  • Military-grade signal processing circuits
  • Harsh environment amplifier stages

Single Bipolar Transistors Procurement Notes

Verify the specific suffix configuration against official Microchip documentation to ensure compatibility with required radiation hardness or screening levels. Confirm that the LCC-3 package dimensions align with the target PCB footprint. Validate that the component meets all necessary environmental certifications for the intended deployment zone before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when a surface-mount NPN BJT is required for high-temperature applications exceeding standard industrial limits. The 80 V collector-emitter rating suits moderate voltage switching tasks. Ensure the design accommodates the 500 mW power dissipation constraint under worst-case thermal conditions. Compare against through-hole alternatives if board space permits lower operating temperatures.

Single Bipolar Transistors Part Context

This part belongs to the 2N3700 family of small-signal BJTs produced by Microchip Technology. It serves as the surface-mount, reel-packaged variant of the traditional through-hole TO-18 transistor. The 'JAN' prefix indicates military-grade qualification standards, while the 'SR' suffix typically denotes specific reel packaging configurations within the manufacturer's catalog.

Single Bipolar Transistors Replacement Considerations

The JAN2N3700UB is a verified direct substitute offering identical electrical specifications in a compatible surface-mount package. Verify pinout alignment and thermal characteristics when transitioning between these variants.

JANSR2N3700UBJANSR2N3700UB
$32.02
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