Single Bipolar Transistors JANTX2N3867S product image

JANTX2N3867S

$24.71
  • Description:TRANS PNP 40V 3MA TO39
  • Series:-

SKU:3cc64c24c017 Category: Brand:

  
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JANTX2N3867S is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is TRANS PNP 40V 3MA TO39. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for JANTX2N3867S

  • Description:TRANS PNP 40V 3MA TO39
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):3 mA
  • Voltage - Collector Emitter Breakdown (Max):40 V
  • Vce Saturation (Max) @ Ib, Ic:1.5V @ 250mA, 2.5A
  • Current - Collector Cutoff (Max):100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 1.5A, 2V
  • Power - Max:1 W
  • Frequency - Transition:-
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-205AD, TO-39-3 Metal Can
  • Supplier Device Package:TO-39 (TO-205AD)
  • Grade:Military
  • Qualification:MIL-PRF-19500/350

Single Bipolar Transistors datasheet and documents for JANTX2N3867S

JANTX2N3867S

Single Bipolar Transistors Overview

The JANTX2N3867S is a silicon PNP power bipolar junction transistor (BJT) manufactured by Microchip Technology. Designed for through-hole mounting, this component features short leads and operates within an extended temperature range of -65°C to +200°C. It supports a maximum collector current of 3 mA with a power dissipation rating of 1 W. Key voltage specifications include a collector-emitter breakdown voltage (VCEO) of 60 V, a collector-base voltage (VCBO) of 60 V, and an emitter-base voltage (VEBO) of 4 V. The device exhibits a collector-emitter saturation voltage of 500 mV.

Single Bipolar Transistors Feature Summary

  • Radiation-hardened construction suitable for harsh environments
  • Extended operating temperature range up to 200°C
  • Short-lead package design for specific mechanical constraints

Single Bipolar Transistors Applications

  • Military aerospace systems
  • Satellite electronics
  • High-reliability power switching circuits

Single Bipolar Transistors Procurement Notes

Verify the specific suffix designation against official Microchip documentation to confirm lead length variations and radiation hardness levels. Ensure procurement channels provide valid traceability records required for defense or space-grade components. Confirm that the delivered units match the exact part number specifications regarding voltage ratings and thermal performance limits.

Single Bipolar Transistors Selection Notes

Select this component when high reliability and radiation tolerance are critical requirements. The 60 V rating and 1 W dissipation capability suit low-current power applications. Consider the short-lead form factor for board layout constraints. Verify compatibility with existing thermal management solutions given the wide operational temperature range.

Single Bipolar Transistors Part Context

This part belongs to the JANTX series of radiation-hardened bipolar transistors produced by Microchip's Microsemi division. These components are engineered for extreme environments where standard commercial parts would fail. The JANTX2N3867S specifically addresses needs for robust PNP switching in aerospace and defense sectors.

Single Bipolar Transistors Replacement Considerations

Consult official Microchip substitution guides for verified equivalents. Generic replacements may not meet the required radiation hardness or temperature specifications.

JANTX2N3867SJANTX2N3867S
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