JANTXV2N2857UB

JANTXV2N2857UB

$51.85
  • Description:RF TRANS NPN 15V 0.04A UB
  • Series:-

SKU:b9c2652e23f3 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF TRANS NPN 15V 0.04A UB
  • Series:-
  • Mfr:Microsemi Corporation
  • Package:Bulk
  • Transistor Type:NPN
  • Voltage - Collector Emitter Breakdown (Max):15V
  • Frequency - Transition:-
  • Noise Figure (dB Typ @ f):4.5dB @ 450MHz
  • Gain:21dB
  • Power - Max:200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce:30 @ 3mA, 1V
  • Current - Collector (Ic) (Max):40mA
  • Operating Temperature:-65°C ~ 200°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:3-SMD, No Lead
  • Supplier Device Package:UB
  • Grade:-
  • Qualification:-

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JANTXV2N2857UB

Overview

The JANTXV2N2857UB is a silicon NPN RF small signal bipolar transistor designed for ultra-high frequency applications. It features a maximum collector current of 40 mA and a collector-emitter voltage rating of 15 V. The device operates within a temperature range of -65°C to +200°C and dissipates up to 200 mW of power. Packaged in the UB-3 surface-mount format, it provides a minimum DC current gain (hFE) of 30. This component is qualified to the JANTXV level under MIL-PRF-19500 standards, ensuring high reliability for demanding environments.

Feature Summary

  • Hermetically sealed ceramic construction for environmental protection
  • Qualified to JANTXV military screening standards
  • Optimized for ultra-high frequency RF signal processing

Applications

  • Military aerospace communication systems
  • High-reliability RF amplification circuits
  • Spacecraft electronic subsystems

Procurement Notes

Verify the manufacturer designation on the datasheet header, as Microsemi's semiconductor assets were acquired by Microchip Technology. Confirm that the specific ordering suffix matches the required radiation hardness and screening level. Ensure the package type corresponds to the UB-3 form factor before finalizing procurement orders.

Selection Notes

Select this component when a hermetically sealed NPN transistor with a 15 V collector-emitter rating is required for UHF bands. Verify that the 200 mW power dissipation capability meets the thermal design constraints. Ensure the circuit design accommodates the specified minimum hFE of 30 for proper biasing and gain requirements.

Part Context

This part belongs to the 2N2857 family of silicon NPN transistors produced for military specifications. It shares the core electrical characteristics of the standard 2N2857 but includes enhanced screening and hermetic sealing associated with the JANTXV qualification level. The UB suffix indicates the specific surface-mount ceramic package variant.

Replacement Considerations

Direct replacements include the JANS2N2857UB for higher radiation tolerance or the commercial 2N2857UB if military screening is not required. Verify pinout compatibility and ensure the substitute meets the 15 V and 40 mA limits.

JANTXV2N2857UBJANTXV2N2857UB
$51.85
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