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The JANTXV2N2857UB is a silicon NPN RF small signal bipolar transistor designed for ultra-high frequency applications. It features a maximum collector current of 40 mA and a collector-emitter voltage rating of 15 V. The device operates within a temperature range of -65°C to +200°C and dissipates up to 200 mW of power. Packaged in the UB-3 surface-mount format, it provides a minimum DC current gain (hFE) of 30. This component is qualified to the JANTXV level under MIL-PRF-19500 standards, ensuring high reliability for demanding environments.
Verify the manufacturer designation on the datasheet header, as Microsemi's semiconductor assets were acquired by Microchip Technology. Confirm that the specific ordering suffix matches the required radiation hardness and screening level. Ensure the package type corresponds to the UB-3 form factor before finalizing procurement orders.
Select this component when a hermetically sealed NPN transistor with a 15 V collector-emitter rating is required for UHF bands. Verify that the 200 mW power dissipation capability meets the thermal design constraints. Ensure the circuit design accommodates the specified minimum hFE of 30 for proper biasing and gain requirements.
This part belongs to the 2N2857 family of silicon NPN transistors produced for military specifications. It shares the core electrical characteristics of the standard 2N2857 but includes enhanced screening and hermetic sealing associated with the JANTXV qualification level. The UB suffix indicates the specific surface-mount ceramic package variant.
Direct replacements include the JANS2N2857UB for higher radiation tolerance or the commercial 2N2857UB if military screening is not required. Verify pinout compatibility and ensure the substitute meets the 15 V and 40 mA limits.