Single Bipolar Transistors JANTXV2N3867U4 product image

JANTXV2N3867U4

$143.65
  • Description:TRANS PNP 40V 3A U4
  • Series:-

SKU:e1090d8a1f78 Category: Brand:

  
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JANTXV2N3867U4 is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Microchip Technology. Its product description is TRANS PNP 40V 3A U4. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for JANTXV2N3867U4

  • Description:TRANS PNP 40V 3A U4
  • Series:-
  • Mfr:Microchip Technology
  • Package:Bulk
  • Transistor Type:PNP
  • Current - Collector (Ic) (Max):3:00 AM
  • Voltage - Collector Emitter Breakdown (Max):40 V
  • Vce Saturation (Max) @ Ib, Ic:1.5V @ 250mA, 2.5A
  • Current - Collector Cutoff (Max):100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce:40 @ 1.5A, 2V
  • Power - Max:1 W
  • Frequency - Transition:-
  • Operating Temperature:200°C (TJ)
  • Mounting Type:Surface Mount
  • Package / Case:3-SMD, No Lead
  • Supplier Device Package:U4
  • Grade:-
  • Qualification:-

Single Bipolar Transistors datasheet and documents for JANTXV2N3867U4

JANTXV2N3867U4

Single Bipolar Transistors Overview

The JANTXV2N3867U4 is a PNP silicon low-power bipolar junction transistor (BJT) manufactured by Microchip Technology. It is designed for high-reliability applications and complies with the MIL-PRF-19500/350H specification, superseding the previous MIL-PRF-19500/350G standard. The device features a TO-5-3 metal can package suitable for through-hole mounting. Key electrical ratings include a collector-emitter voltage of 40 V, a collector current of 3 mA, and a power dissipation capability of 1 W.

Single Bipolar Transistors Feature Summary

  • Complies with MIL-PRF-19500/350H military performance specifications for enhanced reliability.

Single Bipolar Transistors Applications

  • Aerospace electronic systems
  • Defense circuitry
  • High-reliability switching applications

Single Bipolar Transistors Procurement Notes

Verify that the specific order references the MIL-PRF-19500/350H standard to ensure compliance with the latest military performance requirements. Confirm that the component is sourced from authorized channels to guarantee authenticity and traceability. Ensure that handling procedures account for the sensitivity of hermetically sealed ceramic or metal packages used in this series.

Single Bipolar Transistors Selection Notes

Select this component when a PNP silicon BJT with a 40 V collector-emitter rating and 3 mA continuous current capacity is required. The TO-5-3 package is appropriate for designs necessitating robust thermal management and mechanical stability. Consider the JANTXV grade for applications demanding higher screening standards than the JAN level.

Single Bipolar Transistors Part Context

This part belongs to the 2N3867 family of low-power PNP transistors produced under strict military quality controls. The U4 suffix typically denotes the specific lead frame or package configuration within the TO-5-3 style. These devices are engineered to meet rigorous environmental and electrical criteria defined by defense industry standards.

Single Bipolar Transistors Replacement Considerations

The JANTXV2N3867U4 supersedes components conforming to MIL-PRF-19500/350G. Verify pinout compatibility and electrical parameters against existing designs before substitution. Consult official datasheets for any dimensional changes associated with the updated manufacturing standards.

JANTXV2N3867U4JANTXV2N3867U4
$143.65
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