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Product Detailed Parameters
- Description：JFET 2N-CH 40V 50MA 8SOIC
- Series：-
- Mfr：Texas Instruments
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：2 N-Channel (Dual)
- Voltage - Breakdown (V(BR)GSS)：40 V
- Drain to Source Voltage (Vdss)：40 V
- Current - Drain (Idss) @ Vds (Vgs=0)：-
- Current Drain (Id) - Max：50 mA
- Voltage - Cutoff (VGS off) @ Id：1.5 V @ 0.1 µA
- Input Capacitance (Ciss) (Max) @ Vds：13pF @ 5V
- Resistance - RDS(On)：-
- Power - Max：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package：8-SOIC
- Grade：-
- Qualification：-
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Overview
The JFE2140DR is a dual N-channel JFET in an 8-pin SOIC package. It provides ultra-low noise performance with input-referred voltage noise of 0.9 nV/√Hz at 1 kHz and IDS = 5 mA, or 1.1 nV/√Hz at 1 kHz and IDS = 2 mA. Current noise is 1.6 fA/√Hz at 1 kHz. The device features low gate current (max 10 pA), high transconductance (30 mS), and differential VGS matching of ±4 mV max. It withstands drain-to-source voltages up to 40 V and gate-to-source/gate-drain voltages down to –40 V. Operating temperature range is –40°C to +125°C.
Feature Summary
- Ultra-low noise performance across all bias currents
- Precision matched-pair configuration for low offset
- Integrated input protection diodes for surge clamping
Applications
- Microphone inputs
- Hydrophones and marine equipment
- Professional audio mixers and control surfaces
- Guitar amplifiers and instrument amps
- Condition monitoring sensors
Procurement Notes
Verify the 'DR' suffix corresponds to the SOIC-8 package when ordering. Confirm that the component meets specific thermal resistance requirements for your application, as junction-to-ambient values are provided for the SOIC variant. Ensure design accounts for the specified absolute maximum ratings regarding gate-to-source and drain-to-source voltages to prevent permanent damage.
Selection Notes
Select this component for applications requiring extremely high input impedance combined with minimal noise contribution. It is suitable for battery-powered audio designs where low quiescent current is critical. Consider the integrated clamp nodes if external protection components would introduce unwanted leakage or nonlinear capacitance into the signal path.
Part Context
This part belongs to Texas Instruments' Burr-Brown Audio discrete JFET family. It utilizes modern high-performance analog bipolar process technology, offering superior noise and matching characteristics compared to older discrete JFET technologies. It serves as a direct replacement for legacy matched-pair JFETs in high-fidelity audio and precision sensor interfaces.
Replacement Considerations
No public confirmed substitute part numbers are available in the documentation.
FAQ
How does the JFE2140 handle overvoltage events on the input?
It features integrated diodes connected to separate clamp nodes (VCH and VCL) that steer current away from the gate during surges, eliminating the need for external protection diodes.
What is the impact of drain-to-source voltage on gate current?
Gate current increases as the drain-to-source voltage increases. For lowest gate input current operation, the datasheet recommends keeping the drain-to-source voltage below 5 V.
Can the JFE2140 be used in a cascode configuration?
Yes, it can be configured as a cascoded front end to increase output impedance and buffer the input node from gate current flow associated with higher VDS voltages.
