KFC4B21080L

Description：MOSFET 12V 2.9A 4CSP
Series：-

SKU:7fc9cb30a69c Category: FET, MOSFET Arrays Brand: Nuvoton Technology Corporation

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

KFC4B21080L is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Nuvoton Technology Corporation. Its product description is MOSFET 12V 2.9A 4CSP. Review the specifications below when checking this part for your BOM.

FET, MOSFET Arrays specifications for KFC4B21080L

Description：MOSFET 12V 2.9A 4CSP
Series：-
Mfr：Nuvoton Technology Corporation
Package：Tape & Reel (TR)
Technology：MOSFET (Metal Oxide)
Configuration：-
FET Feature：-
Drain to Source Voltage (Vdss)：12V
Current - Continuous Drain (Id) @ 25°C：2.9A (Ta)
Rds On (Max) @ Id, Vgs：37mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id：1.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs：7.1nC @ 4V
Input Capacitance (Ciss) (Max) @ Vds：850pF @ 10V
Power - Max：350mW (Ta)
Operating Temperature：150°C
Mounting Type：Surface Mount
Package / Case：4-XFLGA, CSP
Supplier Device Package：4-CSP (1.11x1.11)
Grade：Automotive
Qualification：AEC-Q100

FET, MOSFET Arrays datasheet and documents for KFC4B21080L

KFC4B21080L

FET, MOSFET Arrays Overview

The KFC4B21080L is a dual N-channel MOSFET with integrated gate resistors, designed for lithium-ion secondary battery protection circuits. It features a CSP package and RoHS compliance. Key electrical parameters include a source-source breakdown voltage of 12 V, a typical on-resistance of 27 mΩ at VGS = 4.5 V, and a DC source current rating of 2.9 A. The device supports a pulsed source current of 29 A and operates within a channel temperature range up to 150 °C.

FET, MOSFET Arrays Feature Summary

Dual N-channel configuration with built-in gate resistors
Optimized for lithium-ion secondary battery protection applications
Compact Chip Size Package (CSP) design

FET, MOSFET Arrays Applications

Lithium-ion secondary battery protection circuits

FET, MOSFET Arrays Procurement Notes

Verify the specific datasheet revision and manufacturing origin before integration. Confirm that the CSP land pattern matches the recommended pad size of 47 mm² Cu area on FR4 substrate for accurate thermal performance. Ensure the application environment remains within the specified absolute maximum ratings to prevent device failure.

FET, MOSFET Arrays Selection Notes

Select this component when a compact dual MOSFET solution is required for battery management systems. The low on-resistance minimizes power loss during operation. Verify that the system's gate drive voltage aligns with the threshold characteristics to ensure optimal switching performance and thermal stability under load conditions.

FET, MOSFET Arrays Part Context

This component belongs to the KFCAB21500L product standards series manufactured by Nuvoton Technology Corporation Japan. It is part of a lineup of discrete semiconductor devices focused on power management and protection applications. The device utilizes silicon technology and is packaged in a ULGA004-W-1212 format suitable for surface mount assembly.