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KFC4B22180LE is listed in the FET, MOSFET Arrays range at ChipApex. The manufacturer field lists Nuvoton Technology Corporation. Its product description is MOSFET 2N-CH 20V 5A 4CSP. Review the specifications below when checking this part for your BOM.
FET, MOSFET Arrays specifications for KFC4B22180LE
- Description：MOSFET 2N-CH 20V 5A 4CSP
- Series：-
- Mfr：Nuvoton Technology Corporation
- Package：Tape & Reel (TR),Cut Tape (CT)
- Technology：MOSFET (Metal Oxide)
- Configuration：2 N-Channel (Dual) Common Drain
- FET Feature：-
- Drain to Source Voltage (Vdss)：20V
- Current - Continuous Drain (Id) @ 25°C：5A (Ta)
- Rds On (Max) @ Id, Vgs：11.9mOhm @ 2.5A, 4.5V
- Vgs(th) (Max) @ Id：1.4V @ 640µA
- Gate Charge (Qg) (Max) @ Vgs：23nC @ 4V
- Input Capacitance (Ciss) (Max) @ Vds：2440pF @ 10V
- Power - Max：400mW (Ta)
- Operating Temperature：150°C
- Mounting Type：Surface Mount
- Package / Case：4-XFLGA, CSP
- Supplier Device Package：4-CSP (1.74x1.74)
- Grade：-
- Qualification：-
FET, MOSFET Arrays datasheet and documents for KFC4B22180LE
FET, MOSFET Arrays Overview
The KFC4B22180L is a dual N-channel MOSFET with an integrated gate resistor, designed for lithium-ion secondary battery protection circuits. It operates within a source-source voltage range of 20 V and supports DC source currents up to 5 A or 10 A depending on the channel. The device features a typical source-source ON resistance (RSS(on)) of 9.4 mΩ at VGS = 4.5 V. It utilizes a CSP package (MLGA004-W-1717-RB) and complies with RoHS standards.
FET, MOSFET Arrays Feature Summary
- Dual N-channel configuration with built-in gate resistors
- Optimized for low power dissipation in battery protection applications
- Compact Chip Size Package (CSP) design
FET, MOSFET Arrays Applications
- Lithium-ion secondary battery protection circuits
FET, MOSFET Arrays Procurement Notes
Verify the specific datasheet revision against the manufacturer's official documentation before finalizing designs. Confirm that the MLGA004-W-1717-RB package dimensions align with your PCB land pattern requirements. Ensure thermal management strategies account for the specified thermal resistance values under your actual mounting conditions.
FET, MOSFET Arrays Selection Notes
Select this component when a compact dual MOSFET solution is required for battery management systems. Consider the 20 V breakdown voltage and current ratings relative to the target cell configuration. Evaluate the thermal performance based on the FR4 board versus ceramic substrate mounting options provided in the datasheet.
FET, MOSFET Arrays Part Context
This part belongs to Nuvoton Technology Corporation Japan's discrete semiconductor portfolio. It is specifically engineered as a dual MOSFET module rather than a single transistor, offering space savings and simplified circuit layouts for protection boards. The inclusion of gate resistors reduces external component count.
FET, MOSFET Arrays Replacement Considerations
Consult official Nuvoton documentation for verified substitute part numbers. Do not assume cross-compatibility with other manufacturers' dual MOSFETs without verifying pinout, electrical characteristics, and package dimensions.
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