KFCAB21490LE

FET, MOSFET Arrays Overview

The KFCAB21490L is a dual N-channel MOSFET array manufactured by Nuvoton Technology Corporation Japan. It features an integrated gate resistor and utilizes a CSP (Chip Size Package) with 10-SMD, no-lead configuration. The device supports a source-source voltage of 12V and a continuous DC source current of 13.5A on FR4 boards. Key electrical parameters include a maximum gate-source threshold voltage of 1.4V at 1.11mA, a typical source-source on-state resistance of 2.2mΩ at VGS = 3.8V, and a total gate charge of 25nC at VGS = 4V. It operates within a junction temperature range up to 150°C and complies with RoHS standards.

FET, MOSFET Arrays Feature Summary

• Dual N-channel MOSFET configuration with integrated gate resistors for simplified circuit design.
• Low source-source on-state resistance optimized for high-efficiency power switching applications.
• Halogen-free construction compliant with EU RoHS directives and UL-94 V-0 flammability rating.
• CSP package design suitable for compact surface-mount assembly.

FET, MOSFET Arrays Applications

• Lithium-ion secondary battery protection circuits
• Power management systems requiring low on-resistance switching
• Compact electronic devices utilizing CSP packaging

FET, MOSFET Arrays Procurement Notes

Verify the specific ordering suffix against official documentation, as suffixes may indicate variations in packaging or tape-and-reel specifications. Confirm that the component meets the required environmental compliance standards for your region. Ensure that the procurement channel provides valid traceability for the manufacturer's intellectual property rights. Cross-reference the datasheet revision number to guarantee alignment with the latest technical specifications before finalizing orders.

FET, MOSFET Arrays Selection Notes

Select this component when designing lithium-ion battery protection circuits requiring a dual N-channel MOSFET solution with minimal footprint. The integrated gate resistor simplifies layout and reduces external component count. Consider the 12V breakdown voltage and 13.5A current capability relative to the thermal dissipation constraints of the target PCB material. Verify that the operating voltage aligns with the specified VGS thresholds for optimal on-state resistance performance.

FET, MOSFET Arrays Part Context

The KFCAB21490L belongs to the family of dual N-channel MOSFET arrays produced by Nuvoton Technology Corporation Japan. It is specifically engineered for portable electronics and battery-powered systems where space efficiency and switching speed are critical. The inclusion of internal gate resistors distinguishes it from standard discrete MOSFET pairs, offering a consolidated solution for synchronous rectification or load switching applications.

FET, MOSFET Arrays Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.

FET, MOSFET Arrays FAQ

What is the typical source-source on-state resistance at VGS = 3.8V?

The typical source-source on-state resistance (RSS(on)) is 2.2 mΩ when measured at a gate-source voltage of 3.8V and a source current of 6.0A.

Is the KFCAB21490L RoHS compliant?

Yes, the component is halogen-free and RoHS compliant, adhering to EU RoHS directives and meeting UL-94 V-0 flammability standards.

What is the maximum gate-source voltage rating?

The absolute maximum rating for gate-source voltage (VGS) is ±8V.