KSC2756OMTF

Overview

The KSC2756OMTF is an NPN epitaxial silicon transistor designed for RF applications, housed in a surface-mount SOT-23 package. It features a collector-base voltage of 30 V and a collector-emitter voltage of 20 V, with a maximum continuous collector current of 30 mA. The device supports a junction temperature up to 150 °C and offers a typical current gain bandwidth product (fT) of 850 MHz at 5 mA. Key electrical characteristics include a DC current gain ranging from 60 to 240 depending on the classification grade, a saturation voltage of 0.5 V, and a reverse transfer capacitance of 0.5 pF.

Feature Summary

• Optimized for high conversion gain in mixer circuits
• Designed specifically for VHF TV tuner applications
• Utilizes NPN epitaxial silicon construction

Applications

• Mixer stages in VHF television tuners
• RF signal processing circuits
• High-frequency amplifier modules

Procurement Notes

Verify component authenticity by checking manufacturer markings against official datasheet specifications. Confirm the presence of the hFE grade marking on the SOT-23 package to ensure correct binning. Validate that the part number suffix matches the specific ordering requirements before finalizing procurement orders.

Selection Notes

Select this component when designing circuits requiring high conversion gain around 200 MHz. Ensure the operating collector current remains within the 30 mA limit to maintain reliability. Consider the hFE classification grades to match the required DC current gain range for the specific application design.

Part Context

This component belongs to the KSC2756 series of small-signal bipolar transistors manufactured originally by Fairchild Semiconductor. The series is engineered for very high frequency band operations, providing stable performance in RF environments. It serves as a specialized solution for tuner and mixer designs where low noise and high gain are critical.

Replacement Considerations

Direct substitutes must match the SOT-23 package, NPN polarity, and similar RF parameters. Verify that any replacement maintains comparable fT and conversion gain specifications to ensure circuit compatibility without redesign.