KSD1616AGBU

$0.46

Description：TRANS NPN 60V 1A TO-92-3
Series：-

SKU:9f9113ff34d7 Category: Single Bipolar Transistors Brand: onsemi

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Product introduction

KSD1616AGBU is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists onsemi. Its product description is TRANS NPN 60V 1A TO-92-3. Review the specifications below when checking this part for your BOM.

Single Bipolar Transistors specifications for KSD1616AGBU

Description：TRANS NPN 60V 1A TO-92-3
Series：-
Mfr：onsemi
Package：Bulk
Transistor Type：NPN
Current - Collector (Ic) (Max)：1:00 AM
Voltage - Collector Emitter Breakdown (Max)：60 V
Vce Saturation (Max) @ Ib, Ic：300mV @ 50mA, 1A
Current - Collector Cutoff (Max)：100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce：200 @ 100mA, 2V
Power - Max：750 mW
Frequency - Transition：160MHz
Operating Temperature：150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package：TO-92-3

Single Bipolar Transistors datasheet and documents for KSD1616AGBU

KSD1616AGBU

Single Bipolar Transistors Overview

The KSD1616AGBU is an NPN epitaxial silicon transistor manufactured by onsemi, housed in a TO-92-3 (Case 135AR) lead-frame package. It supports a maximum collector current of 1 A and a collector-emitter breakdown voltage of 60 V. The device features a transition frequency of 160 MHz and a total power dissipation rating of 750 mW at 25°C ambient temperature. DC current gain ranges from 200 to 400 for the 'G' classification. It operates with a junction temperature up to 150°C and includes a thermal resistance of 160°C/W.

Single Bipolar Transistors Feature Summary

Designed for audio frequency power amplifier applications
Suitable for medium speed switching operations
Lead-free construction compliant with environmental standards

Single Bipolar Transistors Applications

Audio frequency power amplifiers
Medium speed switching circuits

Single Bipolar Transistors Procurement Notes

Verify the specific ordering suffix against official documentation to confirm package type and shipping quantity. Confirm RoHS compliance status and check for any product discontinuation notices or lifecycle changes before finalizing procurement plans.

Single Bipolar Transistors Selection Notes

Select this component when designing circuits requiring an NPN transistor with a 60V collector-emitter voltage rating and 1A continuous current capability. Ensure the required DC current gain falls within the specified range for the chosen classification tier.

Single Bipolar Transistors Part Context

This part belongs to the KSD1616A series of NPN epitaxial silicon transistors. It serves as the complementary counterpart to the KSB1116/KSB1116A PNP devices, facilitating push-pull configurations in amplifier designs.