KSH112GTM_NB82051

Single Bipolar Transistors Overview

The KSH112 is an NPN Silicon Darlington Transistor designed for surface mount applications in the D-PAK package. It features a collector-emitter voltage of 100 V and supports a continuous DC collector current of 2 A, with a pulse capability of 4 A. The device provides high DC current gain ranging from 200 to 1200 depending on operating conditions. It includes a built-in damper diode between the emitter and collector terminals.

Single Bipolar Transistors Feature Summary

• High DC current gain suitable for amplification tasks
• Integrated damper diode at the emitter-collector junction
• Lead formed specifically for surface mount applications

Single Bipolar Transistors Applications

• General purpose switching circuits
• Amplifier stages requiring high input impedance
• Driver circuits for loads up to 2 A

Single Bipolar Transistors Procurement Notes

Verify the exact part number suffix against the official ON Semiconductor database, as legacy Fairchild naming conventions using underscores may have been converted to dashes. Confirm that the D-PAK package variant matches your PCB footprint requirements before finalizing procurement orders.

Single Bipolar Transistors Selection Notes

Select this component when a high-gain NPN transistor is required in a surface-mount form factor. Ensure the application operates within the 100 V collector-emitter voltage limit and does not exceed the 2 A continuous current rating without considering thermal derating factors specified in the datasheet.

Single Bipolar Transistors Part Context

This component belongs to the family of NPN silicon darlington transistors originally manufactured by Fairchild Semiconductor. Following corporate integration, these products are now managed under the ON Semiconductor portfolio. The device serves as a direct functional replacement for popular through-hole equivalents like the TIP112.

Single Bipolar Transistors Replacement Considerations

Electrically similar to the TIP112.