LET20030C

Overview

The LET20030C is an N-channel enhancement-mode lateral field-effect RF power transistor manufactured by STMicroelectronics. Designed for broadband commercial and industrial applications, this device operates at a frequency of 2GHz with a gain of 13.9dB. It features a voltage test rating of 28V and a current rating of 9A. The component utilizes the M-243 package configuration.

Feature Summary

• Common source N-channel enhancement-mode lateral field-effect RF power transistor
• Designed for broadband commercial and industrial applications

Applications

• Broadband commercial applications
• Industrial applications

Procurement Notes

Verify component authenticity through official STMicroelectronics channels or authorized distributors. Confirm package type M-243 and electrical specifications match project requirements. Check product status as obsolete may impact long-term supply availability. Request original datasheets for detailed absolute maximum ratings and thermal characteristics before integration.

Selection Notes

Select this component for broadband RF power amplification requiring N-channel LDMOS technology. Ensure system voltage does not exceed 28V test rating. Verify thermal management capabilities for the M-243 package. Consider 2GHz operating frequency and 13.9dB gain for signal chain design. Evaluate current handling capacity of 9A against load requirements.

Part Context

Part of the LET series of RF power transistors from STMicroelectronics. Shares architectural similarities with related models like LET21030C but differs in specific electrical parameters. Utilizes lateral DMOS technology optimized for RF performance. Commonly used in communication systems requiring broadband amplification.

Replacement Considerations

Consult STMicroelectronics for direct substitutes. Cross-reference with LET21030C for similar functionality but verify parameter differences. No public confirmed substitute part numbers are available.