LET9045C

LET9045C

$43.25
  • Description:RF MOSFET LDMOS 28V M243
  • Series:-

SKU:afa8745a7936 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V M243
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tray
  • Technology:LDMOS
  • Frequency:960MHz
  • Gain:17.7dB
  • Voltage - Test:28 V
  • Current Rating (Amps):9A
  • Noise Figure:-
  • Current - Test:300 mA
  • Power - Output:59W
  • Voltage - Rated:80 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:M243
  • Supplier Device Package:M243
  • Configuration:-

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LET9045C

Overview

The LET9045C is an N-channel enhancement-mode lateral field-effect RF power transistor from STMicroelectronics, designed for broadband commercial and industrial applications. It operates in common source mode at 28 V, delivering high gain and broadband performance up to 1.5 GHz. Key electrical parameters include a drain-source breakdown voltage of 90 V, continuous drain current of 9 A, and power dissipation of 130 W. The device supports a maximum operating temperature of +200°C and utilizes the M243-3 surface-mount package.

Feature Summary

  • Common source N-channel enhancement-mode lateral FET architecture
  • High gain and broadband performance optimized for 28 V operation
  • Designed for robust thermal management with high power dissipation capability

Applications

  • Base station RF power amplifiers
  • Broadband commercial communication systems
  • Industrial RF equipment

Procurement Notes

Verify component authenticity through authorized STMicroelectronics distributors or certified partners. Confirm that the received part matches the exact LET9045C designation and M243-3 package type. Check datasheet revisions for any updates to electrical characteristics or handling instructions. Ensure storage conditions comply with moisture sensitivity levels specified in the official documentation to maintain device reliability before assembly.

Selection Notes

Select the LET9045C when designing RF power stages requiring high gain and broadband operation around 960 MHz to 1.5 GHz. Its lateral DMOS technology suits applications needing reliable performance at 28 V bias. Consider the M243-3 package for its specific lead inductance and thermal properties compared to older through-hole options. Evaluate thermal resistance requirements against the 130 W dissipation rating for heat sink design.

Part Context

The LET9045C belongs to the LdmoST family of N-channel enhancement-mode lateral MOSFETs from STMicroelectronics. This series targets high-frequency RF applications where linearity and power efficiency are critical. The component represents a specialized solution for base station infrastructure and industrial radio frequency systems, distinguishing itself through its specific M243 package form factor and optimized broadband characteristics.

Replacement Considerations

Public sources indicate the LET9045C may be obsolete. Verify availability status directly with STMicroelectronics. No confirmed public substitute part numbers are available in the provided documentation. If replacement is necessary, consult manufacturer engineering support for direct equivalents or updated product line recommendations.

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