LET9045F

Overview

The LET9045F is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor from the LdmoST family. It operates at 28 V with a drain-source voltage of 80 V and continuous drain current of 9 A. The device delivers up to 108 W power dissipation and 70 W output power at 960 MHz, achieving 17.7 dB gain. It supports frequencies up to 1 GHz in an M250 surface-mount package.

Feature Summary

• High gain and broadband performance for RF applications
• Designed for high-power operation in common source mode
• Enhancement-mode N-Channel lateral FET technology

Applications

• Base station RF power amplification
• Broadband commercial RF systems
• High-gain RF amplifier circuits

Procurement Notes

Verify the complete part number including suffixes such as 'F' against official STMicroelectronics documentation to ensure correct package and electrical specifications. Confirm that the M250 surface-mount package matches your PCB footprint requirements. Cross-reference datasheet parameters like Vds and Id with your system design constraints before procurement.

Selection Notes

Select this component when designing RF power stages requiring high gain and broadband operation around 960 MHz. Ensure the thermal management solution supports 108 W dissipation. Verify compatibility with 28 V supply rails and check that the M250 package fits the assembly process capabilities.

Part Context

The LET9045F belongs to STMicroelectronics’ LdmoST family of N-channel lateral DMOS transistors. These devices are engineered for robust RF power performance in communication infrastructure. The family emphasizes high efficiency and linearity for base station applications.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.