LET9060

Overview

The LET9060 is an LDMOS transistor designed for RF power amplifier applications. It operates at frequencies between 760 MHz and 870 MHz with a supply voltage of 28 V to 32 V. The device delivers an output power of 100 W, providing a minimum gain of 14 dB and a minimum efficiency of 45%. It maintains stability under load VSWR conditions of up to 5:1.

Feature Summary

• Designed for push-pull class AB power amplifier configurations
• Features excellent thermal stability
• Includes embedded planar balun for balanced/unbalanced signal management
• BeO free construction compliant with RoHS standards

Applications

• Two-way radio base transceiver stations (BTS)
• General wireless services infrastructure

Procurement Notes

Verify the specific part number against official STMicroelectronics documentation to confirm current production status and availability. Ensure compatibility with the intended operating frequency range and thermal requirements. Consult the manufacturer's datasheet for detailed electrical characteristics and handling instructions before integration into designs.

Selection Notes

Select this component for high-power RF applications requiring stable performance in the 760-870 MHz band. Consider its suitability for class AB amplifiers and verify that the system can support the required 32 V supply voltage. Evaluate thermal management needs given the 100 W output capability and ensure the design accommodates the necessary input/output network topology.

Part Context

The LET9060 is utilized in demonstration boards such as the STEVAL-TDR030V1, which serves as a reference design for two-way radio BTS and general wireless services. This context highlights its role in high-frequency RF power amplification within communication infrastructure systems.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided source material.