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The LET9060STR is an N-channel LDMOS transistor from STMicroelectronics, designed for RF power amplifier applications. It operates within a frequency range of 760 MHz to 870 MHz. The device delivers a minimum output power of 100 W with a supply voltage of 32 V. Key electrical parameters include a minimum gain of 14 dB and a minimum efficiency of 45%. It maintains stability under load VSWR conditions of up to 5:1. The component is RoHS compliant and manufactured without Beryllium Oxide (BeO).
Verify the specific ordering suffix against official STMicroelectronics documentation to confirm package type and tape/reel specifications. Ensure compatibility with the intended PCB layout for the embedded planar balun. Confirm that the design accounts for the required 32 V supply and thermal management strategies suitable for 100 W output power levels.
Select this component for high-power RF applications requiring stable performance at 28 V to 32 V. Consider the 760-870 MHz frequency band when designing input/output matching networks. Evaluate the need for push-pull configuration to achieve the specified 100 W output and 14 dB gain. Verify thermal dissipation requirements given the 45% minimum efficiency rating.
The LET9060STR is part of STMicroelectronics' portfolio of RF LDMOS transistors. It serves as the active element in demonstration boards like the STEVAL-TDR030V1. These components are engineered for robustness in communication infrastructure, offering high power density and reliability compared to standard MOSFETs.
Consult official STMicroelectronics substitution guides for verified alternatives. Cross-reference technical parameters such as breakdown voltage, current handling, and package dimensions before considering any substitute devices.
The device is rated for stability with a minimum Load VSWR of 5:1.
No, the amplifier design using this transistor is BeO free and RoHS compliant.
The recommended supply voltage range for operation is 28 V to 32 V.