LET9060STR

LET9060STR

$37.22
  • Description:RF MOSFET LDMOS 28V POWERSO-10RF
  • Series:-

SKU:bfcecfba5d69 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET LDMOS 28V POWERSO-10RF
  • Series:-
  • Mfr:STMicroelectronics
  • Package:Tape & Reel (TR)
  • Technology:LDMOS
  • Frequency:960MHz
  • Gain:17.2dB
  • Voltage - Test:28 V
  • Current Rating (Amps):12A
  • Noise Figure:-
  • Current - Test:300 mA
  • Power - Output:60W
  • Voltage - Rated:80 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:PowerSO-10RF Exposed Bottom Pad (2 Straight Leads)
  • Supplier Device Package:PowerSO-10RF (Straight Lead)
  • Configuration:-

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LET9060STR

Overview

The LET9060STR is an N-channel LDMOS transistor from STMicroelectronics, designed for RF power amplifier applications. It operates within a frequency range of 760 MHz to 870 MHz. The device delivers a minimum output power of 100 W with a supply voltage of 32 V. Key electrical parameters include a minimum gain of 14 dB and a minimum efficiency of 45%. It maintains stability under load VSWR conditions of up to 5:1. The component is RoHS compliant and manufactured without Beryllium Oxide (BeO).

Feature Summary

  • Push-pull Class AB architecture optimized for balanced microstrip line networks.
  • Integrated planar balun for managing balanced versus unbalanced signal interfaces.
  • High thermal stability ensuring reliable operation in demanding environments.

Applications

  • Base Transceiver Stations (BTS) for two-way radio systems.
  • General wireless service infrastructure amplifiers.

Procurement Notes

Verify the specific ordering suffix against official STMicroelectronics documentation to confirm package type and tape/reel specifications. Ensure compatibility with the intended PCB layout for the embedded planar balun. Confirm that the design accounts for the required 32 V supply and thermal management strategies suitable for 100 W output power levels.

Selection Notes

Select this component for high-power RF applications requiring stable performance at 28 V to 32 V. Consider the 760-870 MHz frequency band when designing input/output matching networks. Evaluate the need for push-pull configuration to achieve the specified 100 W output and 14 dB gain. Verify thermal dissipation requirements given the 45% minimum efficiency rating.

Part Context

The LET9060STR is part of STMicroelectronics' portfolio of RF LDMOS transistors. It serves as the active element in demonstration boards like the STEVAL-TDR030V1. These components are engineered for robustness in communication infrastructure, offering high power density and reliability compared to standard MOSFETs.

Replacement Considerations

Consult official STMicroelectronics substitution guides for verified alternatives. Cross-reference technical parameters such as breakdown voltage, current handling, and package dimensions before considering any substitute devices.

FAQ

What is the maximum Load VSWR the LET9060STR can withstand?

The device is rated for stability with a minimum Load VSWR of 5:1.

Does the LET9060STR contain Beryllium Oxide?

No, the amplifier design using this transistor is BeO free and RoHS compliant.

What is the typical operating supply voltage for this component?

The recommended supply voltage range for operation is 28 V to 32 V.

LET9060STRLET9060STR
$37.22
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