LET9060TR

Overview

The LET9060TR is an N-channel LDMOS transistor designed for RF power amplifier applications in the 760 MHz to 870 MHz frequency range. It operates with a supply voltage of 28 V to 32 V and delivers an output power of 100 W. The device provides a minimum gain of 14 dB and maintains a minimum drain efficiency of 45%. It features excellent thermal stability and ensures load VSWR stability up to a ratio of 5:1. The component is BeO-free and RoHS compliant, suitable for two-way radio base transceiver stations and general wireless services.

Feature Summary

• N-channel LDMOS technology optimized for high-frequency RF power amplification
• Robust performance under varying load conditions with high VSWR tolerance
• Lead-free construction ensuring environmental compliance

Applications

• Two-way radio Base Transceiver Stations (BTS)
• General wireless service infrastructure
• RF power amplifier modules operating in the 760-870 MHz band

Procurement Notes

Verify the specific suffix 'TR' against official STMicroelectronics documentation to confirm tape-and-reel packaging status. Ensure the part number matches the current active status, as demonstration boards may utilize discrete components that differ from mass-production variants. Cross-reference the datasheet revision date to guarantee compatibility with current manufacturing standards.

Selection Notes

Select this component for designs requiring 100 W output power in the 760-870 MHz spectrum. Ensure the circuit supports a 28 V to 32 V supply rail. Verify that the PCB layout accommodates the required lumped L-C input/output network and balanced microstrip lines. Confirm thermal management strategies align with the device's stability requirements under maximum load conditions.

Part Context

The LET9060TR is an LDMOS transistor utilized in RF power amplification circuits. It serves as the active element in push-pull Class AB amplifier configurations, such as those found on the STEVAL-TDR030V1 demonstration board. The device enables efficient signal amplification for communication infrastructure by combining high power output with stable gain characteristics across the specified frequency band.

Replacement Considerations

Consult official STMicroelectronics substitution guides for verified alternatives. No public substitute part numbers are confirmed in available documentation.