SEARCH
— IC芯片 | 连接器 | 传感器 | 被动器件 —
The LET9070CB is an RF power LDMOS transistor from STMicroelectronics, designed for high gain and broadband performance in common source mode at a 28 V supply. It operates within the 1 MHz to 1 GHz frequency range, featuring a drain-source breakdown voltage of 80 V and a continuous drain current of 12 A. The device delivers up to 80 W output power with 16 dB gain at 945 MHz. Packaged in M243, it offers excellent thermal stability for base station applications.
Verify the specific ordering suffix against official STMicroelectronics documentation to ensure correct package and electrical specifications. Confirm that the component matches the required M243 package type and 28V operational parameters for your design. Cross-reference datasheet revisions to ensure compatibility with current manufacturing standards.
Select this component for applications requiring high power output and broad bandwidth in the VHF/UHF range. Ensure the design supports a 28V supply and accommodates the 12A continuous drain current capability. Consider the M243 package thermal requirements for effective heat dissipation in base station or industrial amplifier circuits.
This part belongs to the LET series of RF power transistors utilizing LdmoST technology. These devices are engineered for robust performance in radio frequency power amplification. The LET9070CB specifically targets scenarios needing high efficiency and linearity at 28V, serving as a key active component in modern wireless infrastructure.
Consult official STMicroelectronics substitution guides for verified alternatives. Direct replacements must match the 80V Vds, 12A Id, and M243 package constraints. Verify pinout compatibility and thermal characteristics before integrating any substitute components into existing designs.