LET9120

Overview

The LET9120 is an N-channel enhancement-mode lateral DMOS RF power transistor from STMicroelectronics, designed for broadband commercial and industrial applications. It operates with a drain-source voltage of 32V and delivers up to 150W of output power at 860MHz. The device features a gain of 18dB and requires a gate drive current of 400mA. Packaged in the M-246 format, it is optimized for high-efficiency RF performance in demanding environments.

Feature Summary

• Lateral DMOS technology for robust RF power handling
• Enhancement-mode N-channel configuration
• Broadband operational capability

Applications

• Commercial broadcast transmitters
• Industrial RF heating systems
• Amateur radio equipment

Procurement Notes

Verify the specific datasheet revision and package marking against the M-246 footprint requirements. Confirm that the thermal management solution supports the 150W power dissipation profile. Ensure the gate drive circuitry can supply the required 400mA current for proper switching operation.

Selection Notes

Select this component when a 32V supply rail and 150W output power are required at 860MHz. Consider the M-246 package constraints for PCB layout. Evaluate thermal resistance capabilities if operating near maximum power limits in continuous wave modes.

Part Context

This part belongs to the LET series of lateral MOSFETs from STMicroelectronics. These devices are engineered for high-power RF applications where linearity and efficiency are critical. The LET9120 specifically targets frequencies around 860MHz, distinguishing it from lower or higher frequency variants within the same product family.

Replacement Considerations

Check for direct substitutes such as the LET9150 if higher power ratings are needed. Verify pin compatibility and thermal characteristics before swapping components to ensure system integrity.