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The LET9180 is a common source n-channel enhancement-mode lateral field-effect RF power transistor designed for broadband commercial and industrial applications at frequencies up to 2 GHz. It delivers an output power of 180 W with 19 dB gain at 860 MHz. The device features excellent thermal stability and utilizes a BeO-free package. It operates within a 32 V supply range and supports a maximum drain current of 500 mA, ensuring robust performance in high-frequency RF environments.
Verify the specific datasheet revision and RoHS compliance status prior to procurement. Confirm that the M246 package type aligns with your PCB footprint requirements. Ensure that the operating frequency range up to 2 GHz meets your system specifications. Check for any obsolete status indicators as availability may vary across distributors.
Select this component when high output power and thermal stability are required for broadband RF applications. Consider the 32 V supply voltage and 500 mA current limits during circuit design. Evaluate the need for push-pull configuration compatibility. Verify that the BeO-free package meets regulatory standards for your target market.
The LET9180 belongs to STMicroelectronics' LdmoST family of n-channel enhancement-mode lateral MOSFETs. This series is engineered for high-power RF applications requiring robust thermal management. The device complements other parts like the LET9120 and LET9130, offering specific performance characteristics tailored for broadband commercial and industrial use cases.
Public confirmed substitute part numbers include LET9120 and LET9130 from the same LdmoST family. These alternatives share similar technology but may differ in specific power or gain parameters. Verify electrical compatibility before substitution.