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The M07820-11 is an RF MOSFET transistor manufactured by MACOM Technology Solutions. It utilizes Silicon (Si) technology and features an N-Channel configuration. The device is designed for operation up to a frequency of 175 MHz. Key electrical specifications include a drain-source breakdown voltage (Vds) of 65 V, a continuous drain current (Id) of 24 A, and a maximum output power of 20 W. It provides a gain of 13 dB and supports a maximum operating temperature of +200°C. The component is available in screw mount installation style.
Verify the specific package variant and testing status against the official datasheet before procurement. Confirm that the required supply chain channels are authorized to ensure component authenticity. Check for any recent product change notifications or shipping folder updates that may affect physical dimensions or handling procedures. Ensure compatibility with existing thermal management solutions given the high operating temperature rating.
Select this component when a high-voltage, high-current RF MOSFET is required for frequencies up to 175 MHz. The 65 V breakdown voltage and 24 A current rating suit applications demanding significant power handling. Consider the screw mount package for mechanical stability and heat dissipation needs. Evaluate the 13 dB gain requirement against system design constraints to ensure adequate signal amplification without external stages.
This part belongs to the family of RF MOSFET transistors produced by MACOM Technology Solutions. These devices are engineered for analog RF, microwave, and millimeter-wave semiconductor applications. The M07820-11 specifically addresses the need for robust, high-power switching and amplification in demanding environments, serving sectors such as telecommunications, industrial, and defense markets.
No public confirmed substitute part numbers are documented for this specific model.