MA3X74000L

Diode Arrays Overview

The MA3X740 is a silicon epitaxial planar Schottky barrier diode designed for super high-speed switching and small current rectification. It integrates two internally connected MA3X721 diodes in series within an EIAJ SC-59 Mini3-G1 package. Key electrical parameters include a maximum repetitive peak reverse voltage of 30 V, an average forward current rating of 200 mA per single diode, and a junction temperature limit of 150 °C. The device exhibits a typical forward voltage of 0.55 V at 200 mA, a terminal capacitance of 30 pF, and a reverse recovery time of 3.0 ns.

Diode Arrays Feature Summary

• Integrates two internal diodes in series configuration within a single surface-mount package
• Engineered for super high-speed switching applications with low reverse recovery time
• Features low forward voltage characteristics suitable for small current rectification

Diode Arrays Applications

• Super high-speed switching circuits
• Small current rectification tasks
• General electronic equipment such as office machines and measuring instruments

Diode Arrays Procurement Notes

Verify the specific revision status of the datasheet before procurement, as specifications are subject to change without notice. Confirm that the application aligns with standard general electronic equipment usage, as the component is not qualified for special applications involving life support or safety devices. Ensure static discharge precautions are observed during handling due to sensitivity to electric shock.

Diode Arrays Selection Notes

Select this component when a compact solution for dual-series Schottky rectification is required. The SC-59 package offers space efficiency for surface-mount designs. Consider the 30 V reverse voltage rating and 200 mA forward current limits to ensure operation remains within absolute maximum ratings. Evaluate the 3.0 ns reverse recovery time against circuit speed requirements to confirm suitability for high-frequency switching environments.

Diode Arrays Part Context

The MA3X740 belongs to Panasonic's Schottky Barrier Diode family, specifically utilizing silicon epitaxial planar technology. It serves as a successor or variant to the conventional MA740 designation. The device is manufactured by Matsushita Electric Industrial Co., Ltd. and complies with the RoHS Directive (EU 2002/95/EC), indicating restricted hazardous substance content for environmental compliance.

Diode Arrays Replacement Considerations

No verified public substitute part numbers are documented in the provided source material.