MAGX-000035-010000

Overview

The MAGX-000035-010000 is a Gallium Nitride on Silicon Carbide (GaN/SiC) depletion-mode HEMT power transistor designed for broadband RF applications. It operates within a frequency range of 30 MHz to 3.5 GHz and delivers 10 W continuous wave output power at 1.2–1.4 GHz with typical drain efficiency of 41% at +50 V supply voltage. The device features a flanged ceramic package, common-source configuration, and no internal matching. Absolute maximum ratings include a supply voltage of +65 V, junction temperature up to 200°C, and an estimated MTTF of 600 years under specified thermal conditions.

Feature Summary

• Constructed as a GaN Depletion-Mode HEMT on Silicon Carbide substrate for high ruggedness
• Features a gold-metalized unmatched design suitable for custom impedance matching networks
• Utilizes a flanged ceramic package providing excellent thermal performance
• Capable of stable operation in extreme mismatched load conditions

Applications

• Commercial Wireless Infrastructure including WCDMA, LTE, and WiMAX
• Civilian and Military Radar systems
• Military and Commercial Communications equipment
• SATCOM and Avionics applications
• Industrial, Scientific and Medical (ISM) instrumentation

Procurement Notes

Verify the specific ordering suffix when purchasing; the '0' suffix denotes the flanged version while 'S' indicates flangeless. Confirm RoHS compliance status and ensure the supplier provides the original MACOM datasheet revision V3 documentation. Validate that the component matches the exact part number to avoid confusion with other power levels in the same series.

Selection Notes

Select this component for designs requiring a broadband, unmatched RF power transistor across multiple octaves. The device supports Class AB operation and requires external matching circuits. Ensure the system can handle the recommended sequencing of gate and drain voltages to prevent damage. Verify thermal management capabilities to maintain junction temperatures below the 200°C limit for optimal reliability.

Part Context

This transistor belongs to MACOM's portfolio of high-performance GaN on SiC devices. It is part of a family offering various power levels, including 15 W, 50 W, and 90 W variants. Unlike plastic-packaged entries in the portfolio, this model utilizes a ceramic construction with a flange for superior heat dissipation in demanding RF amplifier environments.

Replacement Considerations

No public confirmed substitute part numbers are available in the provided documentation.