MAGX-000035-01000S

Overview

The MAGX-000035-01000S is a flangeless Gallium Nitride on Silicon Carbide (GaN on SiC) High Electron Mobility Transistor (HEMT) power transistor manufactured by MACOM Technology Solutions. Designed for broadband applications from 30 MHz to 3.5 GHz, this device delivers 10 W of continuous wave output power at 1.3 GHz with a typical drain efficiency of 45%. It operates with a typical supply voltage of +50 V and features a common-source configuration without internal matching networks. The component utilizes a gold-metalized ceramic package to ensure excellent thermal performance and high ruggedness under extreme mismatched load conditions.

Feature Summary

• Constructed as a GaN Depletion-Mode HEMT in a common-source configuration
• Features a gold-metalized ceramic package for superior thermal management
• Provides high gain, efficiency, and bandwidth over multiple octave ranges
• Demonstrates high breakdown voltage for reliable operation under severe load mismatches

Applications

• Commercial Wireless Infrastructure including WCDMA, LTE, and WiMAX
• Civilian and Military Radar Systems
• Military and Commercial Communications Equipment
• Public Radio Broadcasting
• Industrial, Scientific, and Medical (ISM) Applications

Procurement Notes

Verify the specific ordering suffix 'S' corresponds to the flangeless package variant when sourcing components. Confirm RoHS compliance status against current regulatory requirements. Ensure that handling procedures account for Electrostatic Discharge (ESD) sensitivity, specifically the Charged Device Model (CDM) and Human Body Model (HBM) ratings specified in the datasheet. Validate that the supplier provides the official MACOM datasheet revision V3 documentation for accurate technical specifications.

Selection Notes

Select this component for designs requiring a flangeless form factor while maintaining high-power RF capabilities across a broad frequency spectrum. Consider the thermal resistance values provided for both continuous wave and pulsed operations to determine appropriate heat sinking solutions. Evaluate the device's tolerance to high Voltage Standing Wave Ratio (VSWR) conditions to ensure system robustness. Verify that the required input and output impedance matching networks align with the test fixture impedances listed in the electrical specifications.

Part Context

This part belongs to the MAGX-000035 series of GaN on SiC HEMT power transistors offered by MACOM. The series includes variants such as the MAGX-000035-010000, which shares identical electrical characteristics but utilizes a flanged ceramic package instead of the flangeless design found in the -01000S model. These devices are engineered to replace older semiconductor technologies by offering higher efficiency and ruggedness in demanding RF amplifier applications.

Replacement Considerations

The MAGX-000035-010000 serves as the direct functional equivalent within the same product family, differing only in the presence of a mounting flange. Designers must verify mechanical clearance and mounting hole configurations when substituting between the flanged and flangeless versions to ensure proper integration into the host system chassis.

FAQ

What is the difference between the MAGX-000035-010000 and MAGX-000035-01000S?

The primary difference is the package style; the MAGX-000035-010000 features a flanged ceramic package, while the MAGX-000035-01000S is flangeless. Both share identical electrical specifications and performance characteristics.

Is the MAGX-000035-01000S internally matched?

No, the device is an unmatched transistor. External input and output matching networks are required to interface the component with standard 50-ohm systems.

What is the maximum recommended junction temperature for this device?

The maximum junction or channel temperature is rated at 200°C. Maintaining the junction temperature below this limit is critical for maximizing the Mean Time To Failure (MTTF).