MAGX-000035-015000

Overview

The MAGX-000035-015000 is a GaN on SiC depletion mode HEMT pulsed power transistor operating from DC to 3.5 GHz. It delivers 15 W output power with 17.7 W typical performance at 1.2–1.4 GHz under 50 V drain bias and 15 mA quiescent current. The device features a flanged Cu/W package for thermal enhancement, supporting broadband Class AB operation. Key electrical metrics include 15.5 dB gain, 63% drain efficiency, and robust load mismatch tolerance up to 10:1 VSWR.

Feature Summary

• GaN on SiC depletion mode construction for high breakdown voltage and ruggedness
• Thermally enhanced flanged ceramic package utilizing Copper/Tungsten substrate
• Broadband Class AB operational capability across multiple octaves
• High reliability with extended mean time to failure under specified junction temperatures

Applications

• Commercial Wireless Infrastructure (WCDMA, LTE, WiMAX)
• Air Traffic Control Radar - Commercial
• Weather Radar - Commercial
• Military Radar Systems
• Public Radio Broadcasting

Procurement Notes

Verify the specific ordering suffix when sourcing components. The MAGX-000035-015000 designation indicates a flanged configuration in bulk packaging. Ensure compatibility with sample boards such as the MAGX-L20035-015000 if evaluation is required. Confirm RoHS compliance status and check for any recent revision updates to the datasheet prior to final procurement decisions.

Selection Notes

Select this component for applications requiring high power density and wide bandwidth in RF amplifier designs. The flanged package facilitates direct mounting to heat sinks for efficient thermal management. Ensure drive circuits support the required +50V drain supply and proper gate sequencing to prevent latch-up. Evaluate thermal resistance parameters against system cooling capabilities to maintain junction temperature within safe operating limits.

Part Context

This part belongs to MACOM's MAGX series of Gallium Nitride on Silicon Carbide transistors. These devices are engineered for demanding RF power applications where traditional semiconductor technologies lack sufficient breakdown voltage or efficiency. The series utilizes advanced wafer fabrication processes to achieve high gain and ruggedness over broad frequency ranges suitable for modern communication and radar systems.

Replacement Considerations

Direct substitutes are not explicitly listed in the provided documentation. Designers should evaluate other MAGX series variants or comparable GaN HEMTs based on pinout compatibility, thermal interface requirements, and electrical performance envelopes. Verify that alternative components meet the same load mismatch stability and absolute maximum rating specifications.

FAQ

What is the recommended device sequencing for turning the MAGX-000035-015000 ON?

Set VGS to pinch-off (typically -5 V), turn on VDS to nominal voltage (+50 V), increase VGS until the desired IDS current is reached, and then apply RF power.

What is the maximum load mismatch tolerance for this transistor?

The device supports a load mismatch tolerance of up to 10:1 VSWR during pulsed operation with 0.5 W input power.

How is the Mean Time To Failure (MTTF) defined for this component?

The MTTF is rated at 600 years, calculated based on a junction temperature (TJ) kept below 200°C.