MAGX-000035-01500P

MAGX-000035-01500P

$32.44
  • Description:RF MOSFET HEMT 50V 14DFN
  • Series:-

SKU:12a68a3f5c13 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET HEMT 50V 14DFN
  • Series:-
  • Mfr:MACOM Technology Solutions
  • Package:Bulk
  • Technology:HEMT
  • Frequency:3.5GHz
  • Gain:14dB
  • Voltage - Test:50 V
  • Current Rating (Amps):1mA
  • Noise Figure:-
  • Current - Test:35 mA
  • Power - Output:14W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:14-VDFN Exposed Pad
  • Supplier Device Package:14-DFN (3x6)
  • Configuration:-

Download product information

MAGX-000035-01500P

Overview

The MAGX-000035-01500P is a GaN on SiC D-mode transistor operating from DC to 3.5 GHz. It features a 3 x 6 mm 14-lead DFN package with a typical 50 V Class AB bias. Pulsed output power reaches 17 W at 1 ms pulse width and 10% duty cycle, with a gain of 19.5 dB and drain efficiency of 65%. The device supports load mismatch stability up to 5:1 and tolerance up to 10:1. Absolute maximum ratings include a 65 V drain supply and 200°C junction temperature.

Feature Summary

  • GaN on SiC D-mode technology designed for high reliability in pulsed applications
  • Thermally-enhanced plastic packaging suitable for true SMT assembly
  • Internal stress buffer enables reliable operation at elevated junction temperatures
  • RoHS compliant with halogen-free mold compound

Applications

  • Pulsed RF power amplification
  • Military radar systems
  • Electronic warfare equipment
  • Test and measurement instrumentation

Procurement Notes

Verify the specific ordering suffix against official MACOM documentation to confirm packaging type. The MAGX-000035-01500P denotes bulk packaging, while other suffixes indicate reel or sample board configurations. Ensure compatibility with ESD handling procedures required for Class 1B devices. Confirm that the supplier provides traceable datasheets matching the Rev. V4 specification to guarantee accurate electrical parameters and pinout definitions.

Selection Notes

Select this component for wideband pulsed applications requiring high voltage operation within a compact surface-mount footprint. The device offers superior thermal performance compared to flanged modules. Designers must account for the negative gate threshold voltage and implement proper bias sequencing to prevent latch-up. Evaluate thermal resistance requirements based on the specific duty cycle and pulse width intended for the target application.

Part Context

This part belongs to the MAGX series of GaN wideband transistors manufactured by MACOM Technology Solutions. The series utilizes Gallium Nitride on Silicon Carbide technology to deliver high power density across broad frequency ranges. The MAGX-000035-01500P specifically targets applications needing robust pulsed performance in a lead-free, plastic DFN package format.

Replacement Considerations

The datasheet identifies this device as an ideal replacement for costly flanged or metal-backed module components. No specific substitute part numbers are provided in the official documentation.

MAGX-000035-01500PMAGX-000035-01500P
$32.44
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