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The MAGX-000035-01500P is a GaN on SiC D-mode transistor operating from DC to 3.5 GHz. It features a 3 x 6 mm 14-lead DFN package with a typical 50 V Class AB bias. Pulsed output power reaches 17 W at 1 ms pulse width and 10% duty cycle, with a gain of 19.5 dB and drain efficiency of 65%. The device supports load mismatch stability up to 5:1 and tolerance up to 10:1. Absolute maximum ratings include a 65 V drain supply and 200°C junction temperature.
Verify the specific ordering suffix against official MACOM documentation to confirm packaging type. The MAGX-000035-01500P denotes bulk packaging, while other suffixes indicate reel or sample board configurations. Ensure compatibility with ESD handling procedures required for Class 1B devices. Confirm that the supplier provides traceable datasheets matching the Rev. V4 specification to guarantee accurate electrical parameters and pinout definitions.
Select this component for wideband pulsed applications requiring high voltage operation within a compact surface-mount footprint. The device offers superior thermal performance compared to flanged modules. Designers must account for the negative gate threshold voltage and implement proper bias sequencing to prevent latch-up. Evaluate thermal resistance requirements based on the specific duty cycle and pulse width intended for the target application.
This part belongs to the MAGX series of GaN wideband transistors manufactured by MACOM Technology Solutions. The series utilizes Gallium Nitride on Silicon Carbide technology to deliver high power density across broad frequency ranges. The MAGX-000035-01500P specifically targets applications needing robust pulsed performance in a lead-free, plastic DFN package format.
The datasheet identifies this device as an ideal replacement for costly flanged or metal-backed module components. No specific substitute part numbers are provided in the official documentation.