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The MAGX-000035-01500S is a flangeless, gold-metalized Gallium Nitride (GaN) on Silicon Carbide RF power transistor designed for broadband Class AB operation from DC to 3.5 GHz. It delivers a typical output power of 17.7 W and drain efficiency of 63% at 1.2–1.4 GHz under pulsed conditions (VDD = 50 V). The device features a thermally enhanced copper package, high breakdown voltage for ruggedness in mismatched loads, and an estimated MTTF of 600 years.
Verify the specific ordering suffix 'S' corresponds to the flangeless bulk packaging variant rather than the flanged version. Confirm that the component meets RoHS compliance requirements as stated in the datasheet. Ensure proper handling procedures are followed due to ESD sensitivity ratings of 150 V CDM and 500 V HBM. Validate thermal management solutions against the specified junction temperature limits.
Select this component for applications requiring high power density and wide bandwidth up to 3.5 GHz. The flangeless package is suitable for designs where mounting surface area is limited compared to the flanged alternative. Consider the +50 V typical operating voltage and the need for correct device sequencing during power-up and power-down cycles to ensure longevity.
This part belongs to the MAGX series of GaN on SiC HEMT Pulsed Power Transistors manufactured by MACOM Technology Solutions. The series includes both flanged and flangeless variants, such as the MAGX-000035-015000, offering flexibility in thermal management and mechanical integration for various RF power amplifier designs.
The datasheet lists the MAGX-L20035-01500S as a sample board variant for the same core device. No other direct substitute part numbers are documented in the provided source material.