MAGX-000035-030000

Overview

The MAGX-000035-030000 is a Gallium Nitride High Electron Mobility Transistor (HEMT) power transistor designed for broadband RF applications. It operates within a frequency range of 30 MHz to 3.5 GHz and delivers up to 30W of continuous wave output power. The device utilizes a gold metalized unmatched construction on Silicon Carbide, housed in a thermally enhanced Cu/Mo/Cu flanged ceramic package. Typical operation is supported at +50V drain voltage with a maximum supply rating of +65V.

Feature Summary

• Depletion mode HEMT technology providing high gain and efficiency across multiple octaves
• Unmatched design suitable for broadband Class AB operation without internal matching networks
• Robust thermal management via Cu/Mo/Cu flanged ceramic packaging
• High breakdown voltage capability ensuring stability under extreme mismatched load conditions

Applications

• Commercial Wireless Infrastructure including WCDMA, LTE, and WiMAX
• Civilian and Military Radar Systems
• Military and Commercial Communications Networks
• Satellite Communications (SATCOM)
• Industrial, Scientific, and Medical Equipment

Procurement Notes

Verify the specific datasheet revision status as the provided documentation indicates preliminary engineering test data. Confirm that the required evaluation board, such as the MAGX-000035-SB1PPR, is available for initial prototyping. Ensure strict adherence to the recommended turn-on and turn-off sequencing procedures to prevent device damage during integration.

Selection Notes

Select this component for designs requiring wide bandwidth coverage from 30 MHz to 3.5 GHz with high power density. The unmatched nature requires external impedance matching networks tailored to specific frequencies within the band. Consider the thermal resistance characteristics when designing heat sinks, noting the junction temperature limits for optimal reliability and MTTF performance.

Part Context

This part belongs to MACOM's GaN in plastic and ceramic power transistor portfolio, specifically targeting high-power microwave applications. It complements other MAGX series devices by offering a robust solution for infrastructure and radar systems where ruggedness and broad frequency coverage are critical requirements.

Replacement Considerations

Direct substitutes are not explicitly listed in the provided documentation. Evaluate other MAGX series transistors based on power output and frequency range compatibility. Verify pinout and thermal interface dimensions before considering alternative packages or technologies.

FAQ

What is the recommended gate voltage sequence for turning on the device?

Set VGS to pinch-off (typically -5V), apply nominal VDS (50V), increase VGS to reach target IDS current, then apply RF power.

Is the device internally matched?

No, the MAGX-000035-030000 is an unmatched transistor requiring external matching networks for optimal performance.

What is the maximum supply voltage rating?

The absolute maximum supply voltage (Vdd) rating is +65V.