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The MAGX-000040-00500P is a GaN on SiC depletion-mode transistor operating from DC to 4.0 GHz in a thermally enhanced plastic SOT-89 package. It delivers 5 W CW output power at 1.6 GHz with 50 V drain bias and 17 mA quiescent current. Pulsed peak output reaches 5.3 W with 13 dB gain and 51.3% efficiency at 1 ms pulse width. The device supports up to 65 V drain voltage, operates between -40°C and +95°C, and features an MTTF of 600 years.
Verify the specific ordering suffix against the manufacturer's datasheet to confirm packaging type. The MAGX-000040-00500P designation indicates bulk packaging, while other suffixes such as TP denote reel quantities. Ensure compatibility with standard surface mount assembly processes and observe electrostatic discharge precautions during handling.
Select this component for designs requiring high power density in a compact form factor. The device is optimized for 50 V operation and offers excellent thermal resistance suitable for both continuous wave and pulsed modes. Consider the SOT-89 package constraints when designing PCB layouts for optimal heat dissipation and RF performance.
This part belongs to MACOM's MAGX series of Gallium Nitride transistors designed for high-power RF applications. The series utilizes advanced GaN on SiC processes to provide superior performance compared to traditional silicon or GaAs technologies. The plastic package variant specifically targets applications seeking to replace more expensive flanged or metal-backed modules.
No direct public substitute part numbers are documented in the provided datasheet.