MAGX-000912-125L00

Overview

The MAGX-000912-125L00 is a GaN on SiC depletion-mode HEMT pulsed power transistor designed for the 960 MHz to 1215 MHz frequency range. It delivers 125 W peak output power under standard operating conditions with a 128 µs pulse width and 10% duty cycle. The device operates at a typical drain voltage of +50 V, providing approximately 19.2 dB gain and 62% drain efficiency. It features an internally matched common-source configuration optimized for broadband Class AB operation.

Feature Summary

• Utilizes GaN on SiC depletion-mode technology for high breakdown voltage and ruggedness in extreme mismatched load conditions.
• Internally matched common-source configuration simplifies circuit design for broadband Class AB operation.
• Gold metalized package construction ensures reliability and thermal performance for demanding avionics applications.

Applications

• Civilian Air Traffic Control (ATC) L-Band Secondary Radar for IFF and Mode-S Avionics
• Military radar systems for IFF and Data Links
• TCAS, JTIDS, DME, and TACAN amplifier applications

Procurement Notes

Verify the specific part number suffix against official MACOM documentation to confirm exact electrical tolerances and packaging specifications. Ensure that procurement channels provide original manufacturer data sheets to validate RoHS compliance and reflow soldering compatibility ratings prior to integration into production designs.

Selection Notes

Select this component for pulsed RF amplifier stages requiring high peak power density within the L-band spectrum. Evaluate thermal management requirements carefully, as junction temperature directly impacts mean time to failure. Confirm that system drive levels and bias sequencing protocols align with the specified absolute maximum ratings and test fixture impedance values.

Part Context

This transistor belongs to the MAGX series of Gallium Nitride on Silicon Carbide devices from M/A-COM Technology Solutions. The series targets high-performance pulsed avionics applications, leveraging advanced wafer fabrication processes to achieve superior gain, efficiency, and bandwidth compared to older semiconductor technologies.

Replacement Considerations

Consult MACOM technical support for verified substitute part numbers. Do not assume functional equivalence with other L-band transistors without verifying impedance matching networks and bias requirements.

FAQ

What is the recommended device sequencing for turning the MAGX-000912-125L00 ON?

Set VGS to pinch-off (typically -5 V), turn on VDS to nominal voltage (50 V), increase VGS until the target IDS current is reached, and then apply RF power.

How does the device handle load mismatch conditions?

The transistor is designed for reliable and stable operation in extreme mismatched load conditions, supporting a source VSWR of 5:1 and a load VSWR of 10:1.

What are the absolute maximum ratings for Drain Voltage and Gate Voltage?

The absolute maximum Drain Voltage (VDD) is +65 V, and the Gate Voltage (VGG) range is -8 V to -2 V.