MAGX-000912-500L00

MAGX-000912-500L00

$745.61
  • Description:RF MOSFET HEMT 50V
  • Series:-

SKU:fee018761d32 Category: Brand:

  
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Product Detailed Parameters

  • Description:RF MOSFET HEMT 50V
  • Series:-
  • Mfr:MACOM Technology Solutions
  • Package:Bulk
  • Technology:HEMT
  • Frequency:960MHz ~ 1.215GHz
  • Gain:20.5dB
  • Voltage - Test:50 V
  • Current Rating (Amps):15.7A
  • Noise Figure:-
  • Current - Test:400 mA
  • Power - Output:500W
  • Voltage - Rated:65 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Configuration:-

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MAGX-000912-500L00

Overview

The MAGX-000912-500L00 is a gold metalized Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistor optimized for pulsed avionics and radar applications. It delivers 500 W peak output power within the 960 to 1215 MHz frequency range using a 128 μs pulse width and 10% duty cycle. The device features internally matched common-source configuration, +50 V typical operation, and high breakdown voltage for stable performance under extreme mismatch load conditions.

Feature Summary

  • Utilizes GaN on SiC depletion-mode HEMT technology for high gain, efficiency, and ruggedness.
  • Features an internally matched common-source configuration supporting broadband Class AB operation.
  • Provides high breakdown voltages ensuring reliable and stable operation under extreme mismatch load conditions.

Applications

  • Civilian Air Traffic Control (ATC), L-Band Secondary Radar for IFF and Mode-S Avionics
  • Military radar for IFF and Data Links

Procurement Notes

Verify the specific package variant required for the design; the MAGX-000912-500L00 denotes the flanged version, while the MAGX-000912-500L0S indicates the flangeless version. Confirm RoHS compliance and 260 °C reflow compatibility requirements with the manufacturer's current documentation before finalizing procurement specifications.

Selection Notes

Select this component when designing pulsed power amplifiers requiring 500 W peak output in the 960 to 1215 MHz band. Ensure the system supports a +50 V drain supply and can manage the thermal resistance of 0.2 °C/W. Verify that the application environment maintains junction temperatures below 200 °C to achieve the specified 600-year MTTF rating.

Part Context

This part belongs to MACOM's MAGX series of GaN on SiC HEMT Pulsed Power Transistors. These devices are engineered specifically for demanding avionics and radar environments where high power density, wide bandwidth, and operational ruggedness are critical requirements.

Replacement Considerations

Public confirmed substitute part numbers: MAGX-000912-500L0S (Flangeless variant).

MAGX-000912-500L00MAGX-000912-500L00
$745.61
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