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The MAGX-000912-500L00 is a gold metalized Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistor optimized for pulsed avionics and radar applications. It delivers 500 W peak output power within the 960 to 1215 MHz frequency range using a 128 μs pulse width and 10% duty cycle. The device features internally matched common-source configuration, +50 V typical operation, and high breakdown voltage for stable performance under extreme mismatch load conditions.
Verify the specific package variant required for the design; the MAGX-000912-500L00 denotes the flanged version, while the MAGX-000912-500L0S indicates the flangeless version. Confirm RoHS compliance and 260 °C reflow compatibility requirements with the manufacturer's current documentation before finalizing procurement specifications.
Select this component when designing pulsed power amplifiers requiring 500 W peak output in the 960 to 1215 MHz band. Ensure the system supports a +50 V drain supply and can manage the thermal resistance of 0.2 °C/W. Verify that the application environment maintains junction temperatures below 200 °C to achieve the specified 600-year MTTF rating.
This part belongs to MACOM's MAGX series of GaN on SiC HEMT Pulsed Power Transistors. These devices are engineered specifically for demanding avionics and radar environments where high power density, wide bandwidth, and operational ruggedness are critical requirements.
Public confirmed substitute part numbers: MAGX-000912-500L0S (Flangeless variant).