MAGX-001090-600L00

Overview

The MAGX-001090-600L00 is a depletion-mode GaN-on-SiC HEMT pulsed power transistor optimized for avionics and radar applications. It delivers 600 W peak output power across the 1030 to 1090 MHz frequency band with a 32 μs pulse width and 2% duty cycle. The device features an internally matched common-source configuration, typically operating at +50 V drain voltage. Electrical characteristics include a typical power gain of 21.4 dB and drain efficiency of 63%. Absolute maximum ratings specify a drain voltage limit of +65 V and an operating junction temperature range up to 250 °C.

Feature Summary

• Utilizes GaN on SiC depletion-mode HEMT technology for high breakdown voltage and ruggedness under extreme mismatch load conditions.
• Internally matched to simplify circuit design and provide broadband Class AB operation.
• RoHS compliant and compatible with 260 °C reflow soldering processes.
• Designed for reliable and stable operation in demanding pulsed power environments.

Applications

• Civilian Air Traffic Control (ATC) L-Band Secondary Radar for IFF and Mode-S avionics
• Military Radar systems for IFF and Data Links

Procurement Notes

Verify the specific package variant required for your application before ordering. The MAGX-001090-600L00 denotes the flanged version, while MAGX-001090-600L0S indicates the flangeless option. Confirm that the evaluation board order notes explicitly state whether it is intended for standard flange or earless flange devices to ensure compatibility with your test fixture assembly.

Selection Notes

Select this component for high-power pulsed applications requiring operation within the 1030 to 1090 MHz band. Ensure the system can support the recommended +50 V typical drain voltage and manage thermal resistance effectively. Consider the internal matching capabilities to reduce external RF network complexity. Verify that the application environment stays within the specified -40 to +95 °C operating temperature range.

Part Context

This part belongs to MACOM's MAGX series of Gallium Nitride on Silicon Carbide RF power transistors. These devices are engineered for high performance, offering high gain, efficiency, and bandwidth. The series targets demanding avionics and radar needs, leveraging advanced wafer fabrication processes to achieve superior ruggedness compared to older semiconductor technologies.

Replacement Considerations

Consult MACOM directly for cross-reference data. The datasheet does not list specific substitute part numbers from other manufacturers. Any replacement must match the 1030-1090 MHz frequency range, 600 W peak power capability, and depletion-mode operational characteristics.

FAQ

What is the recommended device sequencing for turning the MAGX-001090-600L00 ON?

First set VGS to pinch-off (VP), typically -5 V. Next, turn on VDS to the nominal voltage of 50 V. Then increase VGS until the desired IDS current is reached, and finally apply the RF power to the desired level.

How is the input power limit defined for this transistor?

The absolute maximum input power limit is defined as the nominal drive power required to achieve 600 W POUT plus 3 dB.

What are the ESD protection ratings for this component?

The device has a Charged Device Model (CDM) rating of 1300 V and a Human Body Model (HBM) rating of 4000 V.