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The MAGX-001214-125L00 is a GaN on SiC depletion-mode HEMT transistor designed for pulsed L-band radar applications. It delivers 125W peak output power within the 1200 to 1400 MHz frequency range using a 300µs pulse width and 10% duty cycle. The device operates at a typical drain voltage of +50V, achieving up to 62.9% drain efficiency and 18.4dB gain. It features internal matching, broadband Class AB operation, and high load mismatch tolerance with VSWR-S of 5:1 and VSWR-T of 10:1.
Verify component authenticity through authorized MACOM distributors or direct channels. Confirm datasheet revision status prior to implementation. Ensure thermal management meets absolute maximum ratings to maintain reliability. Check for specific ordering suffixes if alternative packaging is required. Validate supply chain documentation against official manufacturer records.
Select this component for designs requiring high peak power density in the L-band spectrum. Evaluate thermal resistance requirements carefully as junction temperature directly impacts MTTF. Consider the internal matching network when designing input and output impedance circuits. Verify that drive levels remain within specified limits to prevent damage during pulsed operation.
This part belongs to the MAGX series of RF power transistors from MACOM Technology Solutions. It utilizes advanced wafer fabrication processes to achieve high performance metrics compared to older semiconductor technologies. The series is optimized for demanding applications requiring wide bandwidth and stable operation under extreme load conditions.
No public confirmed substitute part numbers are available in the provided documentation.