MAGX-003135-120L00

Overview

The MAGX-003135-120L00 is a depletion-mode Gallium Nitride on Silicon Carbide (GaN-on-SiC) High Electron Mobility Transistor (HEMT). It operates in the 3.1 to 3.5 GHz frequency range with a peak output power of 120 W under pulsed conditions (300 μs pulse width, 10% duty cycle). The device utilizes a thermally enhanced Cu/Mo/Cu flanged ceramic package and typically operates at +50 V drain supply voltage. Key electrical characteristics include a forward transconductance of 3.3 S, an output capacitance of 13.4 pF, and a gate threshold voltage of -3 V.

Feature Summary

• Depletion-mode GaN-on-SiC HEMT technology optimized for high gain and efficiency
• Thermally enhanced Cu/Mo/Cu flanged ceramic package for superior heat dissipation
• High load mismatch tolerance supporting stable operation under extreme impedance variations
• Broadband Class AB operational capability across the specified frequency band

Applications

• Civilian radar pulsed systems
• Military radar pulsed systems
• Pulsed power amplifier designs requiring broadband performance

Procurement Notes

Verify that the component matches the exact MACOM part number MAGX-003135-120L00. Confirm the revision status against the datasheet Rev. V4 specifications. Ensure handling procedures strictly follow electrostatic discharge (ESD) precautions due to device sensitivity. Validate that the supplier provides documentation confirming RoHS compliance and the specific export classification code 3A001.b.3.a.3.

Selection Notes

Select this component for applications requiring high peak power density in the L-band frequency spectrum. The device is specifically engineered for pulsed operations rather than continuous wave environments. Designers must account for the depletion-mode nature, which requires negative gate biasing for pinch-off. The ruggedness against load mismatches makes it suitable for systems where impedance stability cannot be guaranteed.

Part Context

This transistor belongs to the MAGX series of RF power transistors manufactured by M/A-COM Technology Solutions Inc. The series focuses on GaN-on-SiC technology to deliver high breakdown voltages and thermal performance. The MAGX-003135-120L00 is distinct from evaluation boards like the MAGX-003135-SB4PPR, serving as the core active semiconductor element for custom amplifier integration.

Replacement Considerations

No direct public substitute part numbers are documented in the provided datasheet. Cross-referencing requires matching the 120 W peak power, 3.1–3.5 GHz bandwidth, and depletion-mode configuration. Any alternative must support similar thermal resistance and withstand comparable load mismatch tolerances.

FAQ

What is the recommended device sequencing for turning the MAGX-003135-120L00 ON?

First set the gate-source voltage (VGS) to the pinch-off voltage (typically -5 V). Next, turn on the drain supply voltage (VDS) to the nominal level (+50 V). Then increase VGS until the desired quiescent current is reached, and finally apply the RF power.

How does the device handle load mismatch conditions?

The MAGX-003135-120L00 exhibits high ruggedness, maintaining stable operation with a typical load mismatch stability of 5:1 VSWR and a tolerance up to 10:1 VSWR.

Is this component intended for continuous wave (CW) operation?

No, the datasheet specifies the device is optimized for pulsed power applications (e.g., 300 μs pulse width, 10% duty cycle). Sustained operation near absolute maximum ratings is not recommended.