MAMG-002735-085L0L

MAMG-002735-085L0L

  • Description:RF MOSFET GAN 50V
  • Series:-

SKU:15069c68ce10 Category: Brand:

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Product Detailed Parameters

  • Description:RF MOSFET GAN 50V
  • Series:-
  • Mfr:MACOM Technology Solutions
  • Package:Bulk
  • Technology:GaN
  • Frequency:2.7GHz ~ 3.5GHz
  • Gain:25dB
  • Voltage - Test:50 V
  • Current Rating (Amps):4.2A
  • Noise Figure:-
  • Current - Test:200 mA
  • Power - Output:85W
  • Voltage - Rated:53 V
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Package / Case:-
  • Supplier Device Package:-
  • Configuration:-

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MAMG-002735-085L0L

Overview

The MAMG-002735-085L0L is a S-band, two-stage fully matched hybrid GaN amplifier designed for pulsed radar applications. It operates within the 2.7 to 3.5 GHz frequency range and delivers peak output power exceeding 85 W with typical associated gain of 23 dB and power added efficiency of 50%. The device utilizes D-mode GaN on SiC transistor technology and features flexible gate and drain pulsing capabilities. It includes a dedicated gate voltage sense port for temperature or pulse droop compensation. The amplifier is housed in a thermally enhanced laminate LGA package measuring 14 x 24 mm².

Feature Summary

  • Fully matched and decoupled DC and RF design
  • Flexible gate and/or drain pulsing capability
  • Integrated gate voltage sense port for compensation
  • High reliability with MTTF of 600 years at junction temperatures below 200°C

Applications

  • Pulsed RADAR systems
  • S-band communication transmitters
  • Military electronic warfare equipment

Procurement Notes

Verify the specific ordering suffix when purchasing. The suffix '085L0L' indicates bulk packaging, whereas 'TTL' denotes a 100-piece reel. Confirm that the required quantity matches the available packaging format. Ensure compatibility with the recommended evaluation board layout if testing prior to final integration. Check RoHS compliance status as per the manufacturer's current documentation.

Selection Notes

Select this component for high-power S-band applications requiring robust thermal performance and compact surface-mount integration. The device supports up to 1 ms pulse widths and 15% duty cycles. Consider the 50 V typical bias requirement and the need for appropriate ESD handling procedures due to the sensitivity of GaN devices. Evaluate the thermal resistance characteristics for heat sink design.

Part Context

This amplifier belongs to MACOM's portfolio of hybrid GaN amplifiers engineered for demanding RF environments. It combines advanced GaN on SiC technology with a true surface-mount laminate package. The product line targets applications where size, weight, and power efficiency are critical constraints, offering a solution that bridges the gap between discrete components and integrated MMICs.

Replacement Considerations

No direct public substitute part numbers are documented for this specific model.

FAQ

What is the purpose of the VG Sense pin?

The VG Sense pin provides a gate voltage signal that can be utilized for temperature compensation or pulse droop compensation circuits.

How should the device be powered down?

To turn off the device, first remove RF power, decrease the gate voltage (VGS) to the pinch-off voltage, reduce the drain supply voltage (VDS) to 0 V, and finally turn off the gate supply.

What is the maximum junction temperature rating?

The absolute maximum junction temperature rating is 200°C. Operating below this limit is recommended to maximize the mean time to failure (MTTF).

MAMG-002735-085L0LMAMG-002735-085L0L

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