MAPC-A3006-AB000

Overview

The MAPC-A3006-AB000 is a GaN-on-SiC RF power transistor manufactured by MACOM Technology Solutions. It operates within a frequency range of DC to 8 GHz and requires a supply voltage of 28 V. The device delivers an output power of 18 W with a gain of 16.2 dB. Designed for high-efficiency performance, it supports a maximum drain current of 100 mA. The component is housed in a flange package suitable for robust thermal management in demanding RF applications.

Feature Summary

• Utilizes Gallium Nitride on Silicon Carbide technology for enhanced power density
• Supports wideband operation from DC up to 8 GHz
• Engineered for high efficiency and linearity in RF power amplification

Applications

• Base station power amplification
• Military radar systems
• Electronic warfare equipment

Procurement Notes

Verify the specific suffix AB000 against the official datasheet to confirm pinout and mechanical dimensions. Ensure the procurement channel provides original manufacturer documentation. Confirm RoHS compliance status and export control classification (EAR99) prior to ordering. Validate that the supplier offers genuine components with traceable manufacturing records to prevent counterfeit risks.

Selection Notes

Select this component when high power output at microwave frequencies is required. The 28 V bias requirement must align with system power architecture. Consider the flange package for effective heat dissipation compared to surface-mount alternatives. Evaluate thermal resistance requirements based on the 18 W output capability and ambient operating conditions.

Part Context

This part belongs to MACOM's portfolio of GaN-on-SiC transistors designed for high-performance RF applications. These devices are engineered to replace traditional LDMOS technologies in scenarios demanding higher frequency operation and improved power-added efficiency. The product line targets infrastructure and defense markets requiring reliable signal generation.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Cross-referencing with other GaN transistors requires detailed electrical parameter matching and mechanical footprint verification.