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The MAPC-A3006-ABSB1 is an evaluation board designed for the MAPC-A3006 RF transistor. It supports a frequency range of 0 Hz to 8 GHz and utilizes a GaN-on-SiC production process with a 0.15 µm node. The underlying transistor operates at a supply voltage of 28 V, delivering 18 W of power with a gain of 16.2 dB. This add-on board facilitates testing and characterization of the high-performance unmatched transistor in commercial and defense applications.
Verify that the required component is the evaluation board (ABSB1 suffix) rather than the standalone transistor (AS000 suffix). Confirm compatibility with existing test fixtures and ensure the order matches the specific MAPC-A3006 device intended for assessment. Check datasheet revisions for any updates to mechanical dimensions or electrical test conditions prior to integration into measurement setups.
Select this board specifically when the objective is to assess the MAPC-A3006 transistor's behavior under controlled conditions. It is not a standalone functional module but a tool for engineering validation. Ensure the application requires evaluation of a 28 V, 18 W GaN device within the specified frequency range before procurement.
This part belongs to the MAPC-A3006 family of GaN-on-SiC transistors manufactured by MACOM Technology Solutions. The A3006 series represents high-performance, unmatched power transistors utilizing a 0.15 µm process. The ABSB1 designation identifies the specific add-on evaluation board used to test these components, distinct from the packaged transistor itself.
No public confirmed substitute part numbers are available for this specific evaluation board configuration. Evaluation boards are typically unique to their target component and do not have direct cross-model replacements. Engineers must source the original manufacturer part for accurate characterization data.